X-ray diffraction from quantum wires and quantum dots

Y. Zhuang; J. Stangl; A.A. Darhuber; G. Bauer; P. Mikulik; V. Holy; N. Darowski; U. Pietsch

doi:10.1023/A:1008952113611

X-ray diffraction from quantum wires and quantum dots

Y. Zhuang, J. Stangl, A.A. Darhuber, G. Bauer, P. Mikulik, V. Holy, N. Darowski, U. Pietsch

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

Abstract

From the distribution of the scattered intensity in reciprocal space, information on the shape as well as on the strain distribution in nanostructured samples can be obtained. This is exemplified by applying this method to laterally patterned periodic Si/SiGe superlattices as well as to periodic SiGe dot arrays embedded in Si.

Original language	English
Pages (from-to)	215-221
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	10
Issue number	3
DOIs	https://doi.org/10.1023/A:1008952113611
Publication status	Published - 1999

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@article{3ec12a9803804a30aedc91ae84ad34ab,

title = "X-ray diffraction from quantum wires and quantum dots",

abstract = "From the distribution of the scattered intensity in reciprocal space, information on the shape as well as on the strain distribution in nanostructured samples can be obtained. This is exemplified by applying this method to laterally patterned periodic Si/SiGe superlattices as well as to periodic SiGe dot arrays embedded in Si.",

author = "Y. Zhuang and J. Stangl and A.A. Darhuber and G. Bauer and P. Mikulik and V. Holy and N. Darowski and U. Pietsch",

year = "1999",

doi = "10.1023/A:1008952113611",

language = "English",

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pages = "215--221",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

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TY - JOUR

T1 - X-ray diffraction from quantum wires and quantum dots

AU - Zhuang, Y.

AU - Stangl, J.

AU - Darhuber, A.A.

AU - Bauer, G.

AU - Mikulik, P.

AU - Holy, V.

AU - Darowski, N.

AU - Pietsch, U.

PY - 1999

Y1 - 1999

N2 - From the distribution of the scattered intensity in reciprocal space, information on the shape as well as on the strain distribution in nanostructured samples can be obtained. This is exemplified by applying this method to laterally patterned periodic Si/SiGe superlattices as well as to periodic SiGe dot arrays embedded in Si.

AB - From the distribution of the scattered intensity in reciprocal space, information on the shape as well as on the strain distribution in nanostructured samples can be obtained. This is exemplified by applying this method to laterally patterned periodic Si/SiGe superlattices as well as to periodic SiGe dot arrays embedded in Si.

U2 - 10.1023/A:1008952113611

DO - 10.1023/A:1008952113611

M3 - Article

SN - 0957-4522

VL - 10

SP - 215

EP - 221

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 3

ER -

X-ray diffraction from quantum wires and quantum dots

Abstract

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