From the distribution of the scattered intensity in reciprocal space, information on the shape as well as on the strain distribution in nanostructured samples can be obtained. This is exemplified by applying this method to laterally patterned periodic Si/SiGe superlattices as well as to periodic SiGe dot arrays embedded in Si.
|Number of pages||7|
|Journal||Journal of Materials Science: Materials in Electronics|
|Publication status||Published - 1999|