Wurtzite gallium phosphide has a direct-band gap

S. Assali, I. Zardo, S. Plissard, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555-690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1-2
ISBN (Electronic)978-1-4673-6131-6
ISBN (Print)9781467361309
DOIs
Publication statusPublished - 2013
Event25th International Conference on Indium Phosphide and Related Materials (IPRM 2013) - Kobe, Japan
Duration: 19 May 201323 May 2013
Conference number: 25

Conference

Conference25th International Conference on Indium Phosphide and Related Materials (IPRM 2013)
Abbreviated titleIPRM 2013
CountryJapan
CityKobe
Period19/05/1323/05/13
Other25th International Conference on Indium Phosphide and Related materials (IPRM)

Keywords

  • Crystal structure
  • Direct Band Gap
  • Gallium Phosphide

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