Wurtzite gallium phosphide has a direct-band gap

S. Assali; I. Zardo; S. Plissard; M.A. Verheijen; J.E.M. Haverkort; E.P.A.M. Bakkers

doi:10.1109/ICIPRM.2013.6562565

Wurtzite gallium phosphide has a direct-band gap

S. Assali, I. Zardo, S. Plissard, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555-690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.

Original language	English
Title of host publication	Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1-2
ISBN (Electronic)	978-1-4673-6131-6
ISBN (Print)	9781467361309
DOIs	https://doi.org/10.1109/ICIPRM.2013.6562565
Publication status	Published - 2013
Event	25th International Conference on Indium Phosphide and Related Materials (IPRM 2013) - Kobe, Japan Duration: 19 May 2013 → 23 May 2013 Conference number: 25

Conference

Conference	25th International Conference on Indium Phosphide and Related Materials (IPRM 2013)
Abbreviated title	IPRM 2013
Country/Territory	Japan
City	Kobe
Period	19/05/13 → 23/05/13
Other	25th International Conference on Indium Phosphide and Related materials (IPRM)

Keywords

Crystal structure
Direct Band Gap
Gallium Phosphide

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10.1109/ICIPRM.2013.6562565

Cite this

Assali, S., Zardo, I., Plissard, S., Verheijen, M. A., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2013). Wurtzite gallium phosphide has a direct-band gap. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan (pp. 1-2). Article MoC3-3 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2013.6562565

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title = "Wurtzite gallium phosphide has a direct-band gap",

abstract = "Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555-690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.",

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author = "S. Assali and I. Zardo and S. Plissard and M.A. Verheijen and J.E.M. Haverkort and E.P.A.M. Bakkers",

year = "2013",

doi = "10.1109/ICIPRM.2013.6562565",

language = "English",

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booktitle = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), IPRM 2013 ; Conference date: 19-05-2013 Through 23-05-2013",

}

Assali, S, Zardo, I, Plissard, S, Verheijen, MA , Haverkort, JEM & Bakkers, EPAM 2013, Wurtzite gallium phosphide has a direct-band gap. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan., MoC3-3, Institute of Electrical and Electronics Engineers, Piscataway, pp. 1-2, 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), Kobe, Japan, 19/05/13. https://doi.org/10.1109/ICIPRM.2013.6562565

Wurtzite gallium phosphide has a direct-band gap. / Assali, S.; Zardo, I.; Plissard, S. et al.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan. Piscataway: Institute of Electrical and Electronics Engineers, 2013. p. 1-2 MoC3-3.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Wurtzite gallium phosphide has a direct-band gap

AU - Assali, S.

AU - Zardo, I.

AU - Plissard, S.

AU - Verheijen, M.A.

AU - Haverkort, J.E.M.

AU - Bakkers, E.P.A.M.

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N2 - Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555-690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.

AB - Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555-690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.

KW - Crystal structure

KW - Direct Band Gap

KW - Gallium Phosphide

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M3 - Conference contribution

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SN - 9781467361309

SP - 1

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BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan

PB - Institute of Electrical and Electronics Engineers

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T2 - 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013)

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Assali S, Zardo I, Plissard S, Verheijen MA , Haverkort JEM , Bakkers EPAM. Wurtzite gallium phosphide has a direct-band gap. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan. Piscataway: Institute of Electrical and Electronics Engineers. 2013. p. 1-2. MoC3-3 doi: 10.1109/ICIPRM.2013.6562565

Wurtzite gallium phosphide has a direct-band gap

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