Abstract
Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (Φ m) of these films was determined by high-frequency capacitance-voltage measurements (HF-CV) on a thickness series of ALD HfO 2. Depositing films at 400 and 500°C with an optimized pulse sequence, two films with Si content of 3 and 8 at%, respectively, were studied. Both Ta(Si)N films gave Φ m of 4.7 ± 0.1 eV, also after high-temperature thermal treatments, with the 400°C deposition giving more reliable electrical performance.
Original language | English |
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Title of host publication | ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference |
Editors | R.P. Mertens, C.L. Claeys |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 85-88 |
Number of pages | 4 |
ISBN (Print) | 0780384784, 9780780384781 |
DOIs | |
Publication status | Published - 1 Dec 2004 |
Externally published | Yes |
Event | 30th European Solid-State Circuits Conference (ESSCIRC 2004) - Leuven, Belgium Duration: 21 Sep 2004 → 23 Sep 2004 Conference number: 30 |
Conference
Conference | 30th European Solid-State Circuits Conference (ESSCIRC 2004) |
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Abbreviated title | ESSCIRC 2004 |
Country/Territory | Belgium |
City | Leuven |
Period | 21/09/04 → 23/09/04 |