Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO 2

J. C. Hooker; N. Perez; P. Alen; M. Ritala; M. Leskelä; F. Roozeboom; J. G.M. Van Berkum; E. P. Naburgh; F. C. Van Den Heuvel; J.W. Maes

doi:10.1109/ESSDER.2004.1356494

Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO ₂

J. C. Hooker, N. Perez, P. Alen, M. Ritala, M. Leskelä, F. Roozeboom, J. G.M. Van Berkum, E. P. Naburgh, F. C. Van Den Heuvel, J.W. Maes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (Φ _m) of these films was determined by high-frequency capacitance-voltage measurements (HF-CV) on a thickness series of ALD HfO ₂. Depositing films at 400 and 500°C with an optimized pulse sequence, two films with Si content of 3 and 8 at%, respectively, were studied. Both Ta(Si)N films gave Φ _m of 4.7 ± 0.1 eV, also after high-temperature thermal treatments, with the 400°C deposition giving more reliable electrical performance.

Original language	English
Title of host publication	ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
Editors	R.P. Mertens, C.L. Claeys
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	85-88
Number of pages	4
ISBN (Print)	0780384784, 9780780384781
DOIs	https://doi.org/10.1109/ESSDER.2004.1356494
Publication status	Published - 1 Dec 2004
Externally published	Yes
Event	ESSCIRC 2004, 34th European Solid-State Device Research Conference - Leuven, Belgium Duration: 21 Sep 2004 → 23 Sep 2004

Conference

Conference	ESSCIRC 2004, 34th European Solid-State Device Research Conference
Country	Belgium
City	Leuven
Period	21/09/04 → 23/09/04

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Hooker, J. C., Perez, N., Alen, P., Ritala, M., Leskelä, M., Roozeboom, F., Van Berkum, J. G. M., Naburgh, E. P., Van Den Heuvel, F. C., & Maes, J. W. (2004). Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO ₂. In R. P. Mertens, & C. L. Claeys (Eds.), ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference (pp. 85-88). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSDER.2004.1356494

Hooker, J. C. ; Perez, N. ; Alen, P. ; Ritala, M. ; Leskelä, M. ; Roozeboom, F. ; Van Berkum, J. G.M. ; Naburgh, E. P. ; Van Den Heuvel, F. C. ; Maes, J.W. / Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO ₂. ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference. editor / R.P. Mertens ; C.L. Claeys. Piscataway : Institute of Electrical and Electronics Engineers, 2004. pp. 85-88

@inproceedings{68bd23ee6e8c4d0ba636ec684a372864,

title = "Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO 2",

abstract = "Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (Φ m) of these films was determined by high-frequency capacitance-voltage measurements (HF-CV) on a thickness series of ALD HfO 2. Depositing films at 400 and 500°C with an optimized pulse sequence, two films with Si content of 3 and 8 at%, respectively, were studied. Both Ta(Si)N films gave Φ m of 4.7 ± 0.1 eV, also after high-temperature thermal treatments, with the 400°C deposition giving more reliable electrical performance.",

author = "Hooker, {J. C.} and N. Perez and P. Alen and M. Ritala and M. Leskel{\"a} and F. Roozeboom and {Van Berkum}, {J. G.M.} and Naburgh, {E. P.} and {Van Den Heuvel}, {F. C.} and J.W. Maes",

year = "2004",

month = dec,

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doi = "10.1109/ESSDER.2004.1356494",

language = "English",

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booktitle = "ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference",

publisher = "Institute of Electrical and Electronics Engineers",

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Hooker, JC, Perez, N, Alen, P, Ritala, M, Leskelä, M, Roozeboom, F, Van Berkum, JGM, Naburgh, EP, Van Den Heuvel, FC & Maes, JW 2004, Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO ₂. in RP Mertens & CL Claeys (eds), ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference. Institute of Electrical and Electronics Engineers, Piscataway, pp. 85-88, ESSCIRC 2004, 34th European Solid-State Device Research Conference, Leuven, Belgium, 21/09/04. https://doi.org/10.1109/ESSDER.2004.1356494

Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO ₂. / Hooker, J. C.; Perez, N.; Alen, P.; Ritala, M.; Leskelä, M.; Roozeboom, F.; Van Berkum, J. G.M.; Naburgh, E. P.; Van Den Heuvel, F. C.; Maes, J.W.

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference. ed. / R.P. Mertens; C.L. Claeys. Piscataway : Institute of Electrical and Electronics Engineers, 2004. p. 85-88.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Ritala, M.

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AU - Roozeboom, F.

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AB - Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (Φ m) of these films was determined by high-frequency capacitance-voltage measurements (HF-CV) on a thickness series of ALD HfO 2. Depositing films at 400 and 500°C with an optimized pulse sequence, two films with Si content of 3 and 8 at%, respectively, were studied. Both Ta(Si)N films gave Φ m of 4.7 ± 0.1 eV, also after high-temperature thermal treatments, with the 400°C deposition giving more reliable electrical performance.

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Hooker JC, Perez N, Alen P, Ritala M, Leskelä M, Roozeboom F et al. Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO ₂. In Mertens RP, Claeys CL, editors, ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference. Piscataway: Institute of Electrical and Electronics Engineers. 2004. p. 85-88 https://doi.org/10.1109/ESSDER.2004.1356494