Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO 2

J. C. Hooker, N. Perez, P. Alen, M. Ritala, M. Leskelä, F. Roozeboom, J. G.M. Van Berkum, E. P. Naburgh, F. C. Van Den Heuvel, J.W. Maes

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (Φ m) of these films was determined by high-frequency capacitance-voltage measurements (HF-CV) on a thickness series of ALD HfO 2. Depositing films at 400 and 500°C with an optimized pulse sequence, two films with Si content of 3 and 8 at%, respectively, were studied. Both Ta(Si)N films gave Φ m of 4.7 ± 0.1 eV, also after high-temperature thermal treatments, with the 400°C deposition giving more reliable electrical performance.

Original languageEnglish
Title of host publicationESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
EditorsR.P. Mertens, C.L. Claeys
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages85-88
Number of pages4
ISBN (Print)0780384784, 9780780384781
DOIs
Publication statusPublished - 1 Dec 2004
Externally publishedYes
EventESSCIRC 2004, 34th European Solid-State Device Research Conference - Leuven, Belgium
Duration: 21 Sep 200423 Sep 2004

Conference

ConferenceESSCIRC 2004, 34th European Solid-State Device Research Conference
CountryBelgium
CityLeuven
Period21/09/0423/09/04

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