Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continnuous class-e modes theory

M. Özen, M. Acar, M.P. Heijden, van der, M. Apostolidou, D.M.W. Leenaerts, R. Jos, C. Fager

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.
Original languageEnglish
Title of host publicationProceedings of the 2014 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 01-03 June 2014, Tampa, Florida
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages243-246
ISBN (Print)978-1-4799-3862-9
DOIs
Publication statusPublished - 2014
Event2014 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2014) - Tampa, United States
Duration: 1 Jan 20143 Jun 2014

Conference

Conference2014 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2014)
Abbreviated titleRFIC 2014
CountryUnited States
CityTampa
Period1/01/143/06/14

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    Özen, M., Acar, M., Heijden, van der, M. P., Apostolidou, M., Leenaerts, D. M. W., Jos, R., & Fager, C. (2014). Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continnuous class-e modes theory. In Proceedings of the 2014 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 01-03 June 2014, Tampa, Florida (pp. 243-246). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/RFIC.2014.6851709