Abstract
A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active region is demonstrated. The fabricated QD SLEDs exhibit a large spectral width up to 121 nm, covering the range 1165-1286 nm.
Original language | English |
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Pages (from-to) | 41-43 |
Journal | Electronics Letters |
Volume | 41 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2005 |