What is limiting low-temperature atomic layer deposition of Al2O3? A vibrational sum-frequency generation study

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Abstract

The surface reactions during atomic layer deposition (ALD) of Al2O3 from Al(CH3)3 and H2O have been studied with broadband sum-frequency generation to reveal what is limiting the growth at low temperatures. The CH3 surface coverage was measured for temperatures between 100 and 300°C and the absolute reaction cross sections, describing the reaction kinetics, were determined for both half-cycles. It was found that CH3 groups persisted on the surface after saturation of the H2O half-cycle. From a direct correlation with the growth per cycle, it was established that the reduced reactivity of H2O towards CH3 is the dominant factor limiting the ALD process at low temperatures.

Original languageEnglish
Article number011607
Pages (from-to)1-5
JournalApplied Physics Letters
Volume108
Issue number1
DOIs
Publication statusPublished - 4 Jan 2016

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