We achieved wavelength tuning of InAs quantum dots (QDs) embedded in InGaAsP/InP (100) grown by metalorganic vapor-phase epitaxy over the 1.55-µm region at room temperature by inserting GaAs interlayers. The interlayer, together with reduced V/III ratio and extended growth interruption, suppresses As/P exchange to reduce the QD height in a controlled way. The linear dependence of the PL wavelength on the interlayer thickness of stacked QDs reveals the successful reproduction of identical QD layers. Systematic redshift and linewidth reduction of closely-stacked QDs indicate vertical electronic coupling which is proven by the linear polarization of the cleaved-side luminescence changing from in-plane to isotropic.
|Title of host publication||Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium|
|Editors||P. Mégret, M. Wuilpart, S. Bette, N. Staquet|
|Place of Publication||Mons|
|Publication status||Published - 2005|
|Event||10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium - Mons, Belgium|
Duration: 1 Dec 2005 → 2 Dec 2005
|Conference||10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium|
|Period||1/12/05 → 2/12/05|
Anantathanasarn, S., Nötzel, R., Veldhoven, van, P. J., Otten, van, F. W. M., Eijkemans, T. J., Trampert, A., Satpati, B., & Wolter, J. H. (2005). Wavelength tuning (1.55 μm region), stacking and polarization control of InAs/InGaAsP/InP (100) quantum dots grown by metalorganic vapor-phase epitaxy. In P. Mégret, M. Wuilpart, S. Bette, & N. Staquet (Eds.), Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium (pp. 269-272). IEEE/LEOS.