Wavelength tunable InAs/InP(1 0 0) quantum dots in 1.55-µm telecom devices

S. Anantathanasarn, Y. Barbarin, N.I. Cade, P.J. Veldhoven, van, E.A.J.M. Bente, Y.S. Oei, H. Kamada, M.K. Smit, R. Nötzel

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

This paper reviews the growth, characterization and device applications of self-assembled InAs/InP(1 0 0) quantum dots (QDs) formed by MOVPE. The problematic As/P exchange reaction during QD growth is suppressed by the insertion of a GaAs interlayer together with optimum growth conditions. This produces QDs with continuously tunable emission over the 1.55-µm wavelength region for fiber-based telecom applications. Device quality of these QDs is proven by continuous wave lasing at room temperature from the as-cleaved facets of Fabry–Pérot narrow ridge-waveguide lasers implementing widely stacked QDs as gain medium. The low transparency current density of 6 A/cm2 per QD layer and low loss of 4.2 cm-1 are accompanied by a 80-nm wide gain spectrum. The deeply etched QD lasers possess similar threshold current densities as the shallowly etched ones and do not deteriorate with time, revealing that device performance does not suffer from sidewall recombination. This allows the fabrication of mono-mode and more compact devices with small bending radii, as demonstrated by the operation of a QD ring laser with 40-GHz free spectral range. Unpolarized emission from the cleaved side, important for the realization of polarization insensitive semiconductor optical amplifiers, is obtained by close stacking of QDs due to vertical electronic coupling. Sharp exciton–biexciton emission from a single QD around 1.55 µm is observed with clearly resolvable peaks above 70 K, which is required for single photon sources working at liquid nitrogen temperature for fiber-based quantum cryptography systems.
Original languageEnglish
Title of host publicationE-MRS 2007 Semiconductor Nanostructures towards Electronic and Optoelectronic Device ApplicationsSpring Meeting, May 28 - June 1, 2007, Strasbourg
Pages124-130
DOIs
Publication statusPublished - 2007
EventSemiconductor Nanostructures towards Electronic and Optoelectronic Device Applications , May 28-June 1, 2007, Strasbourg, France - Strasbourg, France
Duration: 28 May 20071 Jun 2007

Publication series

NameMaterials Science and Engineering B : Solid-State Materials for Advanced Technology
Number2-3
Volume147
ISSN (Print)0921-5107

Conference

ConferenceSemiconductor Nanostructures towards Electronic and Optoelectronic Device Applications , May 28-June 1, 2007, Strasbourg, France
CountryFrance
CityStrasbourg
Period28/05/071/06/07
OtherSymposium held at the E-MRS Spring Meeting 2007

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