Abstract
Wavelength tunable InAs quantum dots (QDs) embedded in a lattice-matched InGaAsP matrix on InP (100) substrates are grown by metalorganic vapor-phase epitaxy (MOVPE). As/P exchange plays an important role in determining QD size and emission wavelength. The As/P exchange reaction is suppressed by decreasing the QD growth temperature and the V/III flow ratio, reducing the QD size and emission wavelength. The As/P exchange reaction and QD emission wavelength are then reproducibly controlled by the thickness of an ultra-thin (0 - 2 monolayers (MLs)) GaAs interlayer underneath the QDs. Submonolayer GaAs coverages result in a shape transition from QD to quantum dash at low V/III flow ratio. Only the combination of reduced growth temperature and V/III flow ratio with the insertion of GaAs interlayers above one ML thickness allows wavelength tuning of QDs at room temperature over the 1.55 µm region. Temperature dependent photoluminescence measurements reveal excellent optical properties of the QDs. © 2005 JSAP
| Original language | English |
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| Title of host publication | Microoptics Conference MOC'05, Tokyo (Japan), Oct. 31-Nov. 2, 2005 |
| Place of Publication | Tokyo, Japan |
| Publication status | Published - 2005 |
| Event | conference; Microoptics Conference MOC'05 - Duration: 1 Jan 2005 → … |
Conference
| Conference | conference; Microoptics Conference MOC'05 |
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| Period | 1/01/05 → … |
| Other | Microoptics Conference MOC'05 |