Wavelength control of InAs/InP quantum dots: Control of As/P surface exchange reactions (Invited)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	33rd Int. Conf. on the Physics and Chemistry of Semiconductor Interfaces, PCSI 33, Cocoa Beach, Florida (USA), Jan. 15-19, 2006
Place of Publication	Florida (USA)
Publication status	Published - 2006
Event	conference; 33rd Int. Conf. on the Physics and Chemistry of Semiconductor Interfaces - Duration: 1 Jan 2006 → …

Conference	conference; 33rd Int. Conf. on the Physics and Chemistry of Semiconductor Interfaces
Period	1/01/06 → …
Other	33rd Int. Conf. on the Physics and Chemistry of Semiconductor Interfaces

Cite this

@inproceedings{95de42b2b794484eaee4c1ee06b74eb8,

title = "Wavelength control of InAs/InP quantum dots: Control of As/P surface exchange reactions (Invited)",

author = "R. N{\"o}tzel",

year = "2006",

language = "English",

booktitle = "33rd Int. Conf. on the Physics and Chemistry of Semiconductor Interfaces, PCSI 33, Cocoa Beach, Florida (USA), Jan. 15-19, 2006",

note = "conference; 33rd Int. Conf. on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 01-01-2006",

}

Wavelength control of InAs/InP quantum dots: Control of As/P surface exchange reactions (Invited). / Nötzel, R.
33rd Int. Conf. on the Physics and Chemistry of Semiconductor Interfaces, PCSI 33, Cocoa Beach, Florida (USA), Jan. 15-19, 2006. Florida (USA), 2006.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Wavelength control of InAs/InP quantum dots: Control of As/P surface exchange reactions (Invited)

AU - Nötzel, R.

PY - 2006

Y1 - 2006

M3 - Conference contribution

BT - 33rd Int. Conf. on the Physics and Chemistry of Semiconductor Interfaces, PCSI 33, Cocoa Beach, Florida (USA), Jan. 15-19, 2006

CY - Florida (USA)

T2 - conference; 33rd Int. Conf. on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 1 January 2006

ER -