Abstract
This article introduces the packaging and integration of a multichannel silicon-based power amplifier (PA) operating in the range of 70-74 GHz into a metal waveguide (WG) using a contactless IC-to-WG transition. This contactless transition facilitates the IC-WG connection and incorporates a spatial power combiner and an impedance matching network. This article outlines a comprehensive step-by-step design procedure for the PA and the WG. This procedure encompasses an IC-WG joint-design approach for designing input and output matching networks and spatial power splitter and combiner. Based on simulations and experimental results, this article discusses the need to include packaging design methodology in the overall design process, the effect of packaging technology, and their tolerances on prototype performance. The initial PA-WG prototype results show a measured saturated output power of ~0 dBm and a peak power gain of 11 dB at 72 GHz.
| Original language | English |
|---|---|
| Article number | 10684256 |
| Pages (from-to) | 2020-2031 |
| Number of pages | 12 |
| Journal | IEEE Transactions on Components, Packaging and Manufacturing Technology |
| Volume | 14 |
| Issue number | 11 |
| Early online date | 19 Sept 2024 |
| DOIs | |
| Publication status | Published - Nov 2024 |
Funding
This work is supported by The Netherlands Organization for Scientific Research, NWO Vidi grant no. 14852.
| Funders | Funder number |
|---|---|
| Nederlandse Organisatie voor Wetenschappelijk Onderzoek | 14852 |
Keywords
- Electromagnetic coupling (EM)
- millimeter-wave (mm-Wave) technology
- packaging
- power amplifiers
- silicongermanium (SiGe) BiCMOS
- system integration
- waveguide
- power combiner
- silicon-germanium (SiGe) BiCMOS