Voltage-gated pinning in a magnetic domain-wall conduit

J.H. Franken, Y. Yin, A.J. Schellekens, A. Brink, van den, H.J.M. Swagten, B. Koopmans

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)
117 Downloads (Pure)

Abstract

In spintronic devices relying on magnetic domain-wall (DW) motion, robust control over the DW position is required. We use electric-field control of perpendicular magnetic anisotropy to create a voltage-gated pinning site in a microstructured Pt/Co/AlOx DW conduit. A DW pins at the edge of a gate electrode, and the strength of pinning can be tuned linearly and reversibly with an efficiency of 0.22(1) mT/V. This result is supported by a micromagnetic model, taking full account of the anisotropy step at the gate edge, which is directly caused by a change in the electron density due to the choice of material.
Original languageEnglish
Article number102411
Pages (from-to)102411-1/5
Number of pages5
JournalApplied Physics Letters
Volume103
Issue number10
DOIs
Publication statusPublished - 2014

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