Voltage-driven near field beam shifting in an InP photonic integrated circuit

S. Cardarelli (Corresponding author), N. Calabretta, D. D'Agostino, R. Stabile, K.A. Williams

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

A voltage-driven, continuously-tuned beam shifting device is proposed, simulated, and demonstrated in an InP photonic integrated circuit. Electrodes are applied on the left and right side of a mode-expanded waveguide to electronically control the refractive index profile and shift the optical beam by means of reverse bias voltage. The feasibility of a beam shifting of 4.9 μm with a power consumption of the order of 4.5 pW and voltage of 10 V is numerically predicted for a beam shifting element with ideal electrical isolation and fundamental input mode excitation. The reduction in beam-shifting efficiency is subsequently quantified for imperfect electrical isolation and in the presence of higher order mode excitation at the input to the beam shifting element. An experimental proof of concept is implemented by realizing the device on a generic photonic integration platform and co-integrating an on-chip tunable laser. High-resolution near-field measurements show near-field beam shifting of 1 μm with an applied voltage range from −4 to 0 V.
LanguageEnglish
Article number8584479
Number of pages10
JournalIEEE Journal of Quantum Electronics
Volume55
Issue number1
DOIs
StatePublished - Feb 2019

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Photonics
integrated circuits
Integrated circuits
near fields
photonics
Electric potential
electric potential
Laser tuning
Bias voltage
Refractive index
Waveguides
Electric power utilization
isolation
Electrodes
tunable lasers
excitation
platforms
chips
refractivity
waveguides

Cite this

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title = "Voltage-driven near field beam shifting in an InP photonic integrated circuit",
abstract = "A voltage-driven, continuously-tuned beam shifting device is proposed, simulated, and demonstrated in an InP photonic integrated circuit. Electrodes are applied on the left and right side of a mode-expanded waveguide to electronically control the refractive index profile and shift the optical beam by means of reverse bias voltage. The feasibility of a beam shifting of 4.9 μm with a power consumption of the order of 4.5 pW and voltage of 10 V is numerically predicted for a beam shifting element with ideal electrical isolation and fundamental input mode excitation. The reduction in beam-shifting efficiency is subsequently quantified for imperfect electrical isolation and in the presence of higher order mode excitation at the input to the beam shifting element. An experimental proof of concept is implemented by realizing the device on a generic photonic integration platform and co-integrating an on-chip tunable laser. High-resolution near-field measurements show near-field beam shifting of 1 μm with an applied voltage range from −4 to 0 V.",
author = "S. Cardarelli and N. Calabretta and D. D'Agostino and R. Stabile and K.A. Williams",
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Voltage-driven near field beam shifting in an InP photonic integrated circuit. / Cardarelli, S. (Corresponding author); Calabretta, N.; D'Agostino, D.; Stabile, R.; Williams, K.A.

In: IEEE Journal of Quantum Electronics, Vol. 55, No. 1, 8584479, 02.2019.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Cardarelli,S.

AU - Calabretta,N.

AU - D'Agostino,D.

AU - Stabile,R.

AU - Williams,K.A.

PY - 2019/2

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N2 - A voltage-driven, continuously-tuned beam shifting device is proposed, simulated, and demonstrated in an InP photonic integrated circuit. Electrodes are applied on the left and right side of a mode-expanded waveguide to electronically control the refractive index profile and shift the optical beam by means of reverse bias voltage. The feasibility of a beam shifting of 4.9 μm with a power consumption of the order of 4.5 pW and voltage of 10 V is numerically predicted for a beam shifting element with ideal electrical isolation and fundamental input mode excitation. The reduction in beam-shifting efficiency is subsequently quantified for imperfect electrical isolation and in the presence of higher order mode excitation at the input to the beam shifting element. An experimental proof of concept is implemented by realizing the device on a generic photonic integration platform and co-integrating an on-chip tunable laser. High-resolution near-field measurements show near-field beam shifting of 1 μm with an applied voltage range from −4 to 0 V.

AB - A voltage-driven, continuously-tuned beam shifting device is proposed, simulated, and demonstrated in an InP photonic integrated circuit. Electrodes are applied on the left and right side of a mode-expanded waveguide to electronically control the refractive index profile and shift the optical beam by means of reverse bias voltage. The feasibility of a beam shifting of 4.9 μm with a power consumption of the order of 4.5 pW and voltage of 10 V is numerically predicted for a beam shifting element with ideal electrical isolation and fundamental input mode excitation. The reduction in beam-shifting efficiency is subsequently quantified for imperfect electrical isolation and in the presence of higher order mode excitation at the input to the beam shifting element. An experimental proof of concept is implemented by realizing the device on a generic photonic integration platform and co-integrating an on-chip tunable laser. High-resolution near-field measurements show near-field beam shifting of 1 μm with an applied voltage range from −4 to 0 V.

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