Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

F. Werner, B. Veith, M.V. Tiba, P. Poodt, F. Roozeboom, R. Brendel, J. Schmidt

Research output: Contribution to journalArticleAcademicpeer-review

75 Citations (Scopus)
183 Downloads (Pure)

Abstract

Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to
Original languageEnglish
Article number162103
Pages (from-to)162103-1/3
JournalApplied Physics Letters
Volume97
Issue number16
DOIs
Publication statusPublished - 2010

Fingerprint Dive into the research topics of 'Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide'. Together they form a unique fingerprint.

Cite this