Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

F. Werner; B. Veith; M.V. Tiba; P. Poodt; F. Roozeboom; R. Brendel; J. Schmidt

doi:10.1063/1.3505311

Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

F. Werner, B. Veith, M.V. Tiba, P. Poodt, F. Roozeboom, R. Brendel, J. Schmidt

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Abstract

Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to

Original language	English
Article number	162103
Pages (from-to)	162103-1/3
Journal	Applied Physics Letters
Volume	97
Issue number	16
DOIs	https://doi.org/10.1063/1.3505311
Publication status	Published - 2010

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title = "Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide",

abstract = "Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to",

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T1 - Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

AU - Werner, F.

AU - Veith, B.

AU - Tiba, M.V.

AU - Poodt, P.

AU - Roozeboom, F.

AU - Brendel, R.

AU - Schmidt, J.

PY - 2010

Y1 - 2010

N2 - Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to

AB - Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to

U2 - 10.1063/1.3505311

DO - 10.1063/1.3505311

M3 - Article

SN - 0003-6951

VL - 97

SP - 162103-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162103

ER -

Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

Abstract

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