Versatile butt-joint regrowth for dense photonic integration

Yi Wang (Corresponding author), Jorn P. van Engelen, P.J. (René) van Veldhoven, Tjibbe de Vries, Victor Dolores Calzadilla, Meint Smit, Kevin A. Williams, Yuqing Jiao

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)
171 Downloads (Pure)


Butt-joint regrowth is widely used in photonic integration, but it has been challenging to break the density-quality tradeoff due to the edge growth rate enhancement (GRE) effect. In this work, we propose a scheme to circumvent this tradeoff by using large regrowth masks whose centers are exposed to epi-growth for neutralization of the excessive species. With the GRE under control, epi-stacks with arbitrarily large sizes supporting dense arrays can be butt-joint integrated with minimal compromise to their epitaxy quality. In our experiment, multi-quantum-well-based material of an exceptionally large area of 0.5 × 1.7 mm2 was epitaxially integrated with passive InP material on the same wafer. A more than 20 × reduction in edge topology compared to conventional methods was achieved.
Original languageEnglish
Article number431963
Pages (from-to)2478-2487
JournalOptical Materials Express
Issue number8
Publication statusPublished - 13 Jul 2021


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