Variation of kink power with cavity length in weakly index guided semiconductor lasers

C.J. Poel, van der; M.F.C. Schemmann; G.A. Acket

doi:10.1109/ISLC.1994.519353

Variation of kink power with cavity length in weakly index guided semiconductor lasers

C.J. Poel, van der
, M.F.C. Schemmann
, G.A. Acket

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

1 Citation (Scopus)

267 Downloads (Pure)

Abstract

A periodic dependence of kink power on laser length is observed and explained. Weakly-index guided high power stripe lasers in the AlGaAs, InGaAlP and InGaAlAs material systems are studied and periods of 100 to 350 µm are found. The observations indicate that phase locked fundamental and first order modes exist at certain laser lengths. This new model fully explains the oscillatory behaviour of the kink power and the correlated changes in lateral far field distributions at the front and rear mirror facets

Original language	English
Title of host publication	Proceedings of the 14th IEEE International Semiconductor Laser Conference, 19-23 September 1994, Maui, Hawaii
Place of Publication	New York
Publisher	Institute of Electrical and Electronics Engineers
Pages	241-242
ISBN (Print)	0-7803-1754-8
DOIs	https://doi.org/10.1109/ISLC.1994.519353
Publication status	Published - 1994

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Poel, van der, C. J., Schemmann, M. F. C., & Acket, G. A. (1994). Variation of kink power with cavity length in weakly index guided semiconductor lasers. In Proceedings of the 14th IEEE International Semiconductor Laser Conference, 19-23 September 1994, Maui, Hawaii (pp. 241-242). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ISLC.1994.519353

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abstract = "A periodic dependence of kink power on laser length is observed and explained. Weakly-index guided high power stripe lasers in the AlGaAs, InGaAlP and InGaAlAs material systems are studied and periods of 100 to 350 µm are found. The observations indicate that phase locked fundamental and first order modes exist at certain laser lengths. This new model fully explains the oscillatory behaviour of the kink power and the correlated changes in lateral far field distributions at the front and rear mirror facets",

author = "\{Poel, van der\}, C.J. and M.F.C. Schemmann and G.A. Acket",

year = "1994",

doi = "10.1109/ISLC.1994.519353",

language = "English",

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Variation of kink power with cavity length in weakly index guided semiconductor lasers. / Poel, van der, C.J.; Schemmann, M.F.C.; Acket, G.A.
Proceedings of the 14th IEEE International Semiconductor Laser Conference, 19-23 September 1994, Maui, Hawaii. New York: Institute of Electrical and Electronics Engineers, 1994. p. 241-242.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Variation of kink power with cavity length in weakly index guided semiconductor lasers

AU - Poel, van der, C.J.

AU - Schemmann, M.F.C.

AU - Acket, G.A.

PY - 1994

Y1 - 1994

N2 - A periodic dependence of kink power on laser length is observed and explained. Weakly-index guided high power stripe lasers in the AlGaAs, InGaAlP and InGaAlAs material systems are studied and periods of 100 to 350 µm are found. The observations indicate that phase locked fundamental and first order modes exist at certain laser lengths. This new model fully explains the oscillatory behaviour of the kink power and the correlated changes in lateral far field distributions at the front and rear mirror facets

AB - A periodic dependence of kink power on laser length is observed and explained. Weakly-index guided high power stripe lasers in the AlGaAs, InGaAlP and InGaAlAs material systems are studied and periods of 100 to 350 µm are found. The observations indicate that phase locked fundamental and first order modes exist at certain laser lengths. This new model fully explains the oscillatory behaviour of the kink power and the correlated changes in lateral far field distributions at the front and rear mirror facets

U2 - 10.1109/ISLC.1994.519353

DO - 10.1109/ISLC.1994.519353

M3 - Conference contribution

SN - 0-7803-1754-8

SP - 241

EP - 242

BT - Proceedings of the 14th IEEE International Semiconductor Laser Conference, 19-23 September 1994, Maui, Hawaii

PB - Institute of Electrical and Electronics Engineers

CY - New York

ER -

Variation of kink power with cavity length in weakly index guided semiconductor lasers

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