Vapor pressures of precursors for the CVD of titanium nitride and tin oxide

A.M.B. Mol, van; J.P.A.M. Driessen; J.L. Linden; M.H.J.M. Croon, de; C.I.M.A. Spee; J.C. Schouten

doi:10.1002/1521-3862(200105)7:3<101::AID-CVDE101>3.0.CO;2-Z

Vapor pressures of precursors for the CVD of titanium nitride and tin oxide

A.M.B. Mol, van, J.P.A.M. Driessen, J.L. Linden, M.H.J.M. Croon, de, C.I.M.A. Spee, J.C. Schouten

Chemical Reactor Engineering

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Abstract

The vapor pressure curves for CVD precursors for TiN coatings and SnO2 layers are presented. The precursors were Ti(NMe2)4 and Me3CTi(NMe2)3 for TiN and (C4H9)SnCl3, SnCl4, MeSnCl3, Me2SnCl2, Me3SnCl, and SnMe4 for the SnO2 system. No significant decompn. was obsd. for 5 of the Sn precursors. Ti(NMe2)4 and Me3CTi(NMe2)3 had enthalpies of evapn. of 63 +- 6 J/mol and 56 +- 5 J/mol, resp. The values measured were in good agreement with previously reported values for the compds. [on SciFinder (R)]

Original language	English
Pages (from-to)	101-104
Journal	Chemical Vapor Deposition
Volume	7
Issue number	3
DOIs	https://doi.org/10.1002/1521-3862(200105)7:3<101::AID-CVDE101>3.0.CO;2-Z
Publication status	Published - 2001

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@article{82d0e8d1cd7149a8b2431083ff79e586,

title = "Vapor pressures of precursors for the CVD of titanium nitride and tin oxide",

abstract = "The vapor pressure curves for CVD precursors for TiN coatings and SnO2 layers are presented. The precursors were Ti(NMe2)4 and Me3CTi(NMe2)3 for TiN and (C4H9)SnCl3, SnCl4, MeSnCl3, Me2SnCl2, Me3SnCl, and SnMe4 for the SnO2 system. No significant decompn. was obsd. for 5 of the Sn precursors. Ti(NMe2)4 and Me3CTi(NMe2)3 had enthalpies of evapn. of 63 +- 6 J/mol and 56 +- 5 J/mol, resp. The values measured were in good agreement with previously reported values for the compds. [on SciFinder (R)]",

author = "{Mol, van}, A.M.B. and J.P.A.M. Driessen and J.L. Linden and {Croon, de}, M.H.J.M. and C.I.M.A. Spee and J.C. Schouten",

year = "2001",

doi = "10.1002/1521-3862(200105)7:3<101::AID-CVDE101>3.0.CO;2-Z",

language = "English",

volume = "7",

pages = "101--104",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - Vapor pressures of precursors for the CVD of titanium nitride and tin oxide

AU - Mol, van, A.M.B.

AU - Driessen, J.P.A.M.

AU - Linden, J.L.

AU - Croon, de, M.H.J.M.

AU - Spee, C.I.M.A.

AU - Schouten, J.C.

PY - 2001

Y1 - 2001

N2 - The vapor pressure curves for CVD precursors for TiN coatings and SnO2 layers are presented. The precursors were Ti(NMe2)4 and Me3CTi(NMe2)3 for TiN and (C4H9)SnCl3, SnCl4, MeSnCl3, Me2SnCl2, Me3SnCl, and SnMe4 for the SnO2 system. No significant decompn. was obsd. for 5 of the Sn precursors. Ti(NMe2)4 and Me3CTi(NMe2)3 had enthalpies of evapn. of 63 +- 6 J/mol and 56 +- 5 J/mol, resp. The values measured were in good agreement with previously reported values for the compds. [on SciFinder (R)]

AB - The vapor pressure curves for CVD precursors for TiN coatings and SnO2 layers are presented. The precursors were Ti(NMe2)4 and Me3CTi(NMe2)3 for TiN and (C4H9)SnCl3, SnCl4, MeSnCl3, Me2SnCl2, Me3SnCl, and SnMe4 for the SnO2 system. No significant decompn. was obsd. for 5 of the Sn precursors. Ti(NMe2)4 and Me3CTi(NMe2)3 had enthalpies of evapn. of 63 +- 6 J/mol and 56 +- 5 J/mol, resp. The values measured were in good agreement with previously reported values for the compds. [on SciFinder (R)]

U2 - 10.1002/1521-3862(200105)7:3<101::AID-CVDE101>3.0.CO;2-Z

DO - 10.1002/1521-3862(200105)7:3<101::AID-CVDE101>3.0.CO;2-Z

M3 - Article

SN - 0948-1907

VL - 7

SP - 101

EP - 104

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

IS - 3

ER -

Vapor pressures of precursors for the CVD of titanium nitride and tin oxide

Abstract

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