TY - JOUR
T1 - Vapor pressures of precursors for the CVD of silicon-based films
AU - Alcott, Gregory R.
AU - van de Sanden, Richard M.C.M.
AU - Kondic, Sascha
AU - Linden, Joannes L.
PY - 2004/1/1
Y1 - 2004/1/1
N2 - The controlled vaporization and subsequent transport of liquid and solid precursors is an essential part of gas phase process technology. To accurately control precursor feed rate when using conventional bubbler systems, it is imperative to know the precursor vapor pressure, thermal stability, and purity. This paper reports further measurements performed using a procedure and system developed in-house designed to quantify vapor pressure, stability, and the presence of volatile contaminants.
AB - The controlled vaporization and subsequent transport of liquid and solid precursors is an essential part of gas phase process technology. To accurately control precursor feed rate when using conventional bubbler systems, it is imperative to know the precursor vapor pressure, thermal stability, and purity. This paper reports further measurements performed using a procedure and system developed in-house designed to quantify vapor pressure, stability, and the presence of volatile contaminants.
UR - http://www.scopus.com/inward/record.url?scp=1142305347&partnerID=8YFLogxK
U2 - 10.1002/cvde.200306145
DO - 10.1002/cvde.200306145
M3 - Article
AN - SCOPUS:1142305347
SN - 0948-1907
VL - 10
SP - 20
EP - 22
JO - Chemical Vapor Deposition
JF - Chemical Vapor Deposition
IS - 1
ER -