Vacancies and voids in hydrogenated amorphous silicon

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Abstract

The hydride configurations in the hydrogenated amorphous silicon (a-Si:H) network have been studied by means of infrared absorption spectroscopy. The results on the film mass density of a-Si:H deposited by means of an expanding thermal plasma reveal the presence of two distinct regions in terms of hydrogen content and microstructure: below approximately 14 at. % H a-Si:H contains predominantly divacancies decorated by hydrogen, above 14 at. % H a-Si:H contains microscopic voids. These two distinct regions provide additional information on the origin of the low and high hydride stretching modes at 1980–2010 and 2070–2100 cm–1, respectively.
Original languageEnglish
Pages (from-to)1547-1549
JournalApplied Physics Letters
Volume82
Issue number10
DOIs
Publication statusPublished - 2003

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