Unveiling Planar Defects in Hexagonal Group IV Materials

Elham M.T. Fadaly; Anna Marzegalli; Yizhen Ren; Lin Sun; Alain Dijkstra; Diego De Matteis; Emilio Scalise; Andrey Sarikov; Marta De Luca; Riccardo Rurali; Jos E.M. Haverkort; Silvana Botti; Leo Miglio; Erik P.A.M. Bakkers; Marcel A. Verheijen

doi:10.1021/acs.nanolett.1c00683

Unveiling Planar Defects in Hexagonal Group IV Materials

Elham M.T. Fadaly
, Anna Marzegalli
, Yizhen Ren
, Lin Sun
, Alain Dijkstra
, Diego De Matteis
, Emilio Scalise
, Andrey Sarikov
, Marta De Luca
, Riccardo Rurali
, Jos E.M. Haverkort
, Silvana Botti
, Leo Miglio
, Erik P.A.M. Bakkers
, Marcel A. Verheijen (Corresponding author)

Research output: Contribution to journal › Article › Academic › peer-review

20 Citations (Scopus)

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Abstract

Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.

Original language	English
Pages (from-to)	3619-3625
Number of pages	7
Journal	Nano Letters
Volume	21
Issue number	8
DOIs	https://doi.org/10.1021/acs.nanolett.1c00683
Publication status	Published - 28 Apr 2021

Bibliographical note

Publisher Copyright:
© 2021 The Authors. Published by American Chemical Society.

Funding

This project has received funding from the European Union’s Horizon 2020 research and innovation program under Grant agreement no. 735008 (SiLAS). I.Z. acknowledges financial support from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (Grant agreement no. 756365). M.D.L. acknowledges support from the Swiss National Science Foundation Ambizione grant (Grant no. PZ00P2_179801). R.R. acknowledges financial support by the Ministerio de Economía, Industria y Competitividad (MINECO) under Grant FEDER-MAT2017–90024-P, by the Severo Ochoa Centres of Excellence Program under Grant SEV-2015–049,6 and by the Generalitat de Catalunya under Grant no. 2017 SGR 1506. L.S. acknowledges financial support from the China Scholarship Council. S.B. acknowledges funding from the Volkswagen Stiftung (Momentum) through the project “Dandelion” and the DFG through projects SFB-1375 and BO4280/8-1. Computational resources were also provided by the Leibniz Supercomputing Center through projects pr48je and pr62ja.

Funders	Funder number
European Union's Horizon 2020 - Research and Innovation Framework Programme	756365, 735008
European Union's Horizon 2020 - Research and Innovation Framework Programme
Deutsche Forschungsgemeinschaft	SFB-1375, BO4280/8-1
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung	PZ00P2_179801
Generalitat de Catalunya	2017 SGR 1506
Ministerio de Economía y Competitividad	SEV-2015–049,6, FEDER-MAT2017–90024-P
China Scholarship Council

Keywords

defects
hexagonal Ge
hexagonal group IV
hexagonal Si
Ibasal stacking fault
Nanowires

Access to Document

10.1021/acs.nanolett.1c00683

published versionFinal published version, 3.53 MB

Cite this

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title = "Unveiling Planar Defects in Hexagonal Group IV Materials",

abstract = "Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present. ",

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note = "Publisher Copyright: {\textcopyright} 2021 The Authors. Published by American Chemical Society.",

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doi = "10.1021/acs.nanolett.1c00683",

language = "English",

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AU - Fadaly, Elham M.T.

AU - Marzegalli, Anna

AU - Ren, Yizhen

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AU - Dijkstra, Alain

AU - De Matteis, Diego

AU - Scalise, Emilio

AU - Sarikov, Andrey

AU - De Luca, Marta

AU - Rurali, Riccardo

AU - Haverkort, Jos E.M.

AU - Botti, Silvana

AU - Miglio, Leo

AU - Bakkers, Erik P.A.M.

AU - Verheijen, Marcel A.

PY - 2021/4/28

Y1 - 2021/4/28

N2 - Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.

AB - Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.

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Unveiling Planar Defects in Hexagonal Group IV Materials

Abstract

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Unveiling Planar Defects in Hexagonal Group IV Materials

Abstract

Bibliographical note

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Keywords

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