We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe 3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity. Whereas the low-frequency noise spectral density, S I /I 2 , reveals 1/f behavior near room temperature, it is dominated by the Lorentzian bulges of the generation-recombination noise at low temperatures (I is the current and f is the frequency). Unexpectedly, the corner frequency of the observed Lorentzian peaks shows strong sensitivity to the applied source-drain bias. This dependence on electric field can be explained by the Frenkel-Poole effect in the scenario where the voltage drop happens predominantly on the defects, which block the quasi-1D conduction channels. We also have found that the activation energy of the characteristic frequencies of the G-R noise in quasi-1D ZrTe 3 is defined primarily by the temperature dependence of the capture cross-section of the defects rather than by their energy position. These results are important for the application of quasi-1D van der Waals materials in ultimately downscaled electronics.