Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

B. Bory, P. Rocha, H.L. Gomes, D.M. de Leeuw, S.C.J. Meskers

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)
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Abstract

Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 1017 m−2. We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching.
Original languageEnglish
Article number205503
Pages (from-to)1-11
Number of pages11
JournalJournal of Applied Physics
Volume118
DOIs
Publication statusPublished - 2015

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