Abstract
The InP Membrane on Silicon (IMOS) generic technology promises high index contrast photonic integrated circuits. To make this a reality fabrication of an electrically pumped twin-guide laser is pursued. In this paper, one of the bottle-necks for the processing is discussed, the planarization step and subsequent etch-back. Benzocyclobutene (BCB) is used to planarize SOA structures before contacting. Complete curing of BCB at 280oC creates uniformity issues during etch-back. To
mitigate this, a partial cure at 180oC before the etch-back and a complete cure afterwards is performed. Experiments show repeatability and reproducibility. Good uniformity after etch-back is found.
Original language | English |
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Title of host publication | Proceedings of the 18th annual symposium of the IEEE Photonics Society Benelux Chapter, November 25-26, 2013, Eindhoven, The Netherlands |
Editors | X.J.M. Leijtens, D. Pustakhod |
Place of Publication | Eindhoven |
Publisher | Technische Universiteit Eindhoven |
Pages | 219-222 |
ISBN (Print) | 978-90-386-3512-5 |
Publication status | Published - 2013 |
Event | 18th Annual Symposium of the IEEE Photonics Benelux Chapter - Eindhoven, Netherlands Duration: 25 Nov 2013 → 26 Nov 2013 http://www.photonics-benelux.org/symp13/ |
Conference
Conference | 18th Annual Symposium of the IEEE Photonics Benelux Chapter |
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Country/Territory | Netherlands |
City | Eindhoven |
Period | 25/11/13 → 26/11/13 |
Internet address |