Unified physical DC model of staggered amorphous InGaZnO transistors

M. Ghittorelli, F. Torricelli, C. Garripoli, J.L. van der Steen, G.H. Gelinck, E. Cantatore, L. Colalongo, Z.M. Kovács-Vajna

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)
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In this paper, we propose a unified physical model of InGaZnO [amorphous indium-gallium-zinc-oxide (a-IGZO)] thin-film transistors (TFTs) accounting for both charge injection at the contact and charge transport within the channel. We extract the current-voltage characteristics of the injecting contact from the measurements of a-IGZO TFTs fabricated on plastic foil. We show that the charge injection depends on both the drain and the gate voltages. We model the charge injection in staggered a-IGZO TFTs basing on the thermionic emission-diffusion theory including the charge carrier-dependent electron velocity due to the trap states in the subgap of the a-IGZO semiconductor. Combining the charge injection model with a charge transport model, we accurately and consistently describe the measurements of staggered a-IGZO TFTs with channel-length scaling from 200 μ m to 15 μ m. The proposed unified model is implemented in a circuit simulator and used to design unipolar inverters. The good agreement between simulations and measurements of the inverters further confirms the effectiveness of the proposed approach.

Original languageEnglish
Article number7820165
Pages (from-to)1076 - 1082
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - Mar 2017


  • TFT
  • a-IGZO thin-film transistors (TFTs)
  • analytical model
  • physical model
  • unipolar inverter


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