TY - JOUR
T1 - Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generation
AU - Ollearo, Riccardo
AU - Wang, Junke
AU - Dyson, Matthew J.
AU - Weijtens, Christ H.L.
AU - Fattori, Marco
AU - van Gorkom, Bas T.
AU - van Breemen, Albert J.J.M.
AU - Meskers, Stefan C.J.
AU - Janssen, René A.J.
AU - Gelinck, Gerwin H.
PY - 2021/12/14
Y1 - 2021/12/14
N2 - Metal halide perovskite photodiodes (PPDs) offer high responsivity and broad spectral sensitivity, making them attractive for low-cost visible and near-infrared sensing. A significant challenge in achieving high detectivity in PPDs is lowering the dark current density (JD) and noise current (in). This is commonly accomplished using charge-blocking layers to reduce charge injection. By analyzing the temperature dependence of JD for lead-tin based PPDs with different bandgaps and electron-blocking layers (EBL), we demonstrate that while EBLs eliminate electron injection, they facilitate undesired thermal charge generation at the EBL-perovskite interface. The interfacial energy offset between the EBL and the perovskite determines the magnitude and activation energy of JD. By increasing this offset we realized a PPD with ultralow JD and in of 5 × 10−8 mA cm−2 and 2 × 10−14 A Hz−1/2, respectively, and wavelength sensitivity up to 1050 nm, establishing a new design principle to maximize detectivity in perovskite photodiodes.
AB - Metal halide perovskite photodiodes (PPDs) offer high responsivity and broad spectral sensitivity, making them attractive for low-cost visible and near-infrared sensing. A significant challenge in achieving high detectivity in PPDs is lowering the dark current density (JD) and noise current (in). This is commonly accomplished using charge-blocking layers to reduce charge injection. By analyzing the temperature dependence of JD for lead-tin based PPDs with different bandgaps and electron-blocking layers (EBL), we demonstrate that while EBLs eliminate electron injection, they facilitate undesired thermal charge generation at the EBL-perovskite interface. The interfacial energy offset between the EBL and the perovskite determines the magnitude and activation energy of JD. By increasing this offset we realized a PPD with ultralow JD and in of 5 × 10−8 mA cm−2 and 2 × 10−14 A Hz−1/2, respectively, and wavelength sensitivity up to 1050 nm, establishing a new design principle to maximize detectivity in perovskite photodiodes.
UR - http://www.scopus.com/inward/record.url?scp=85121323037&partnerID=8YFLogxK
U2 - 10.1038/s41467-021-27565-1
DO - 10.1038/s41467-021-27565-1
M3 - Article
C2 - 34907190
SN - 2041-1723
VL - 12
JO - Nature Communications
JF - Nature Communications
M1 - 7277
ER -