Ultrahigh-density trench cpacitors in silicon and their application to integrated DC-DC conversion

F. Roozeboom; H.J. Bergveld; K. Nowak; F. Le Cornec; L. Guiraud; C. Bunel; S. Iochem; J. Ferreira; S. Ledain; E. Pieraerts; M. Pommier

Ultrahigh-density trench cpacitors in silicon and their application to integrated DC-DC conversion

F. Roozeboom, H.J. Bergveld, K. Nowak, F. Le Cornec, L. Guiraud, C. Bunel, S. Iochem, J. Ferreira, S. Ledain, E. Pieraerts, M. Pommier

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

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Abstract

This paper addresses silicon-based integration of passive components applied to 3D integration with dies of other technologies within one package. Particularly, the development of high-density trench capacitors has enabled the realization of small-formfactor DC-DC converters. As illustration, an integrated inductive DC-DC converter based on flip-chipping a 65-nm CMOS active die on a PICSÔ (Passive-Integration Connecting Substrate) passive die is described. The PICS die includes high-density (80 nF/mm2) integrated MOS trench capacitors. A converter peak efficiency of 87.5% is achieved at Vin=1.2 V, Vout=0.95 V, Iout=100 mA and 100-MHz switching frequency. The concept enables further integration with sensors, actuators and MEMS.

Original language	English
Title of host publication	Proc. Eurosensors XXIII (Procedia Chemistry), Lausanne, 06-09 Sept. 2009,
Pages	1435-1438
Publication status	Published - 2009

Cite this

@inproceedings{f0f4fae7947646cfa143531c89db1ce5,

title = "Ultrahigh-density trench cpacitors in silicon and their application to integrated DC-DC conversion",

abstract = "This paper addresses silicon-based integration of passive components applied to 3D integration with dies of other technologies within one package. Particularly, the development of high-density trench capacitors has enabled the realization of small-formfactor DC-DC converters. As illustration, an integrated inductive DC-DC converter based on flip-chipping a 65-nm CMOS active die on a PICS{\^O} (Passive-Integration Connecting Substrate) passive die is described. The PICS die includes high-density (80 nF/mm2) integrated MOS trench capacitors. A converter peak efficiency of 87.5% is achieved at Vin=1.2 V, Vout=0.95 V, Iout=100 mA and 100-MHz switching frequency. The concept enables further integration with sensors, actuators and MEMS.",

author = "F. Roozeboom and H.J. Bergveld and K. Nowak and {Le Cornec}, F. and L. Guiraud and C. Bunel and S. Iochem and J. Ferreira and S. Ledain and E. Pieraerts and M. Pommier",

year = "2009",

language = "English",

pages = "1435--1438",

booktitle = "Proc. Eurosensors XXIII (Procedia Chemistry), Lausanne, 06-09 Sept. 2009,",

}

Ultrahigh-density trench cpacitors in silicon and their application to integrated DC-DC conversion. / Roozeboom, F.; Bergveld, H.J.; Nowak, K.; Le Cornec, F.; Guiraud, L.; Bunel, C.; Iochem, S.; Ferreira, J.; Ledain, S.; Pieraerts, E.; Pommier, M.

Proc. Eurosensors XXIII (Procedia Chemistry), Lausanne, 06-09 Sept. 2009,. 2009. p. 1435-1438.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Ultrahigh-density trench cpacitors in silicon and their application to integrated DC-DC conversion

AU - Roozeboom, F.

AU - Bergveld, H.J.

AU - Nowak, K.

AU - Le Cornec, F.

AU - Guiraud, L.

AU - Bunel, C.

AU - Iochem, S.

AU - Ferreira, J.

AU - Ledain, S.

AU - Pieraerts, E.

AU - Pommier, M.

PY - 2009

Y1 - 2009

N2 - This paper addresses silicon-based integration of passive components applied to 3D integration with dies of other technologies within one package. Particularly, the development of high-density trench capacitors has enabled the realization of small-formfactor DC-DC converters. As illustration, an integrated inductive DC-DC converter based on flip-chipping a 65-nm CMOS active die on a PICSÔ (Passive-Integration Connecting Substrate) passive die is described. The PICS die includes high-density (80 nF/mm2) integrated MOS trench capacitors. A converter peak efficiency of 87.5% is achieved at Vin=1.2 V, Vout=0.95 V, Iout=100 mA and 100-MHz switching frequency. The concept enables further integration with sensors, actuators and MEMS.

AB - This paper addresses silicon-based integration of passive components applied to 3D integration with dies of other technologies within one package. Particularly, the development of high-density trench capacitors has enabled the realization of small-formfactor DC-DC converters. As illustration, an integrated inductive DC-DC converter based on flip-chipping a 65-nm CMOS active die on a PICSÔ (Passive-Integration Connecting Substrate) passive die is described. The PICS die includes high-density (80 nF/mm2) integrated MOS trench capacitors. A converter peak efficiency of 87.5% is achieved at Vin=1.2 V, Vout=0.95 V, Iout=100 mA and 100-MHz switching frequency. The concept enables further integration with sensors, actuators and MEMS.

M3 - Conference contribution

SP - 1435

EP - 1438

BT - Proc. Eurosensors XXIII (Procedia Chemistry), Lausanne, 06-09 Sept. 2009,

ER -

Ultrahigh-density trench cpacitors in silicon and their application to integrated DC-DC conversion

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