Ultrahigh-density trench cpacitors in silicon and their application to integrated DC-DC conversion

F. Roozeboom, H.J. Bergveld, K. Nowak, F. Le Cornec, L. Guiraud, C. Bunel, S. Iochem, J. Ferreira, S. Ledain, E. Pieraerts, M. Pommier

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)
1 Downloads (Pure)


This paper addresses silicon-based integration of passive components applied to 3D integration with dies of other technologies within one package. Particularly, the development of high-density trench capacitors has enabled the realization of small-formfactor DC-DC converters. As illustration, an integrated inductive DC-DC converter based on flip-chipping a 65-nm CMOS active die on a PICSÔ (Passive-Integration Connecting Substrate) passive die is described. The PICS die includes high-density (80 nF/mm2) integrated MOS trench capacitors. A converter peak efficiency of 87.5% is achieved at Vin=1.2 V, Vout=0.95 V, Iout=100 mA and 100-MHz switching frequency. The concept enables further integration with sensors, actuators and MEMS.
Original languageEnglish
Title of host publicationProc. Eurosensors XXIII (Procedia Chemistry), Lausanne, 06-09 Sept. 2009,
Publication statusPublished - 2009


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