TY - GEN
T1 - Ultrahigh-density trench capacitors in silicon and their application to integrated DC-DC conversion
AU - Roozeboom, F.
AU - Bergveld, H.J.
AU - Nowak, K.
AU - LeCornec, F.
AU - Guiraud, L.
AU - Bunel, C.
AU - Iochem, S.
AU - Ferreira, J.
AU - Ledain, S.
AU - Pieraerts, E.
AU - Pommier, M.
PY - 2009
Y1 - 2009
N2 - This paper addresses silicon-based integration of passive components applied to 3D integration with dies of other technologies within one package. Particularly, the development of high-density trench capacitors has enabled the realization of small-formfactor DC-DC converters. As illustration, an integrated inductive DC-DC converter based on flip-chipping a 65-nm CMOS active die on a PICSÔ (Passive-Integration Connecting Substrate) passive die is described. The PICS die includes high-density (80
nF/mm2) integrated MOS trench capacitors. A converter peak efficiency of 87.5% is achieved at Vin=1.2 V, Vout=0.95 V, Iout=100 mA and 100-MHz switching frequency. The concept enables further integration with sensors, actuators and MEMS.
AB - This paper addresses silicon-based integration of passive components applied to 3D integration with dies of other technologies within one package. Particularly, the development of high-density trench capacitors has enabled the realization of small-formfactor DC-DC converters. As illustration, an integrated inductive DC-DC converter based on flip-chipping a 65-nm CMOS active die on a PICSÔ (Passive-Integration Connecting Substrate) passive die is described. The PICS die includes high-density (80
nF/mm2) integrated MOS trench capacitors. A converter peak efficiency of 87.5% is achieved at Vin=1.2 V, Vout=0.95 V, Iout=100 mA and 100-MHz switching frequency. The concept enables further integration with sensors, actuators and MEMS.
M3 - Conference contribution
SP - 426-
BT - Proc. 23th Eurosensors Conf., Lausanne, Sept. 16-19, 2009
ER -