Ultrahigh capacitance density for multiple ALD-grown MIM capacitor stacks in 3-D silicon

J.H. Klootwijk, K.B. Jinesh, W. Dekkers, J.F.C. Verhoeven, F.C. Heuvel, van den, H.-D. Kim, D. Blin, M.A. Verheijen, R.G.R. Weemaes, M. Kaiser, J.J.M. Ruigrok, F. Roozeboom

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Abstract

"Trench" capacitors containing multiple metal-insulator-metal (MIM) layer stacks are realized by atomic-layer deposition (ALD), yielding an ultrahigh capacitance density of 440 nF/mm2 at a breakdown voltage VBD > 6 V. This capacitance density on silicon is at least 10 times higher than the values reported by other research groups. On a silicon substrate containing high-aspect-ratio macropore arrays, alternating MIM layer stacks comprising high-k Al2O3 dielectrics and TiN electrodes are deposited using optimized ALD processing such that the conductivity of the TiN layers is not attacked. Ozone annealing subsequent to each Al2O3 deposition step yields significant improvement of the dielectric isolation and breakdown properties.
Original languageEnglish
Pages (from-to)740-742
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number7
DOIs
Publication statusPublished - 2008

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