Ultrafast gain dynamics in 1.3 μm InAs/GaAs quantum-dot optical amplifiers: the effect of p doping

V. Cesari, W. Langbein, P. Borri, M. Rossetti, A. Fiore, S. Mikhrin, I. Krestnikov, A. Kovsh

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34 Citations (Scopus)
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Abstract

Ultrafast gain dynamics of the ground-state transition are measured in electrically pumped InAs/GaAs quantum-dot amplifiers emitting near 1.3 mu m at room temperature. Gain recovery on a subpicosecond time scale occurs at high electrical injection. However, when comparing p-doped and undoped devices fabricated under identical conditions and operating at the same gain, faster absorption recovery but slower gain dynamics are observed in p-doped amplifiers. The slower gain dynamics is attributed to a reduced reservoir of excited-state electrons in p-doped quantum-dot devices, which limits the recovery of the electron ground-state occupation mediated by intradot carrier-carrier scattering
Original languageEnglish
Article number201103
Pages (from-to)201103-1
JournalApplied Physics Letters
Volume90
Issue number20
DOIs
Publication statusPublished - 2007

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