Ultrafast carrier capture in quantum well structures

Paul W. Blom, Jos E. Haverkort, Jan Claes, Pieter J. van Hall, Joachim H. Wolter

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We present an experimental and theoretical study of the carrier capture time into a semiconductor quantum well. The carrier capture time was obtained by measuring both the rise of the quantum well population using time-resolved luminescence measurements and the decay of the barrier population using pump-probe correlation experiments. In the first technique we compare the QW rise times after direct (below the barrier band gap) and indirect (above the barrier band gap) excitation, in order to eliminate the effects of relaxation and exciton formation in the quantum well. We report the first experimental observation of oscillations in the carrier capture time between 3 and 20 ps as a function of quantum well thickness, obtained from both techniques. The observed capture times are for the first time in agreement with theoretical predictions from an ambipolar capture model.

Original languageEnglish
Title of host publicationUltrafast Phenomena in Semiconductors
EditorsDavid K. Ferry, Henry M. van Driel
Number of pages9
ISBN (Print)0819414379, 9780819414373
Publication statusPublished - 6 May 1994
EventUltrafast Phenomena in Semiconductors - Los Angeles, CA, USA
Duration: 27 Jan 199428 Jan 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceUltrafast Phenomena in Semiconductors
CityLos Angeles, CA, USA


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