Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 µm wavelength region

E.W. Bogaart; R. Nötzel; Q. Gong; J.E.M. Haverkort; J.H. Wolter

doi:10.1063/1.1915527

Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 µm wavelength region

E.W. Bogaart, R. Nötzel, Q. Gong, J.E.M. Haverkort, J.H. Wolter

Photonics and Semiconductor Nanophysics

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Abstract

The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quantum dots sQDsd, emitting in the 1.55 µm wavelength region, is investigated by means of time-resolved pump-probe differential reflection spectroscopy at room temperature. We observe ultrafast carrier capture and subsequential carrier relaxation into the QD ground state within 2.5 ps. The carrier lifetime in the QDs strongly depends on the QD optical transition energy within the QD ensemble as well as the carrier density, and ranges from 560 up to 2600 ps.

Original language	English
Article number	173109
Pages (from-to)	173109-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	17
DOIs	https://doi.org/10.1063/1.1915527
Publication status	Published - 2005

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title = "Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 µm wavelength region",

abstract = "The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quantum dots sQDsd, emitting in the 1.55 µm wavelength region, is investigated by means of time-resolved pump-probe differential reflection spectroscopy at room temperature. We observe ultrafast carrier capture and subsequential carrier relaxation into the QD ground state within 2.5 ps. The carrier lifetime in the QDs strongly depends on the QD optical transition energy within the QD ensemble as well as the carrier density, and ranges from 560 up to 2600 ps.",

author = "E.W. Bogaart and R. N{\"o}tzel and Q. Gong and J.E.M. Haverkort and J.H. Wolter",

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T1 - Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 µm wavelength region

AU - Bogaart, E.W.

AU - Nötzel, R.

AU - Gong, Q.

AU - Haverkort, J.E.M.

AU - Wolter, J.H.

PY - 2005

Y1 - 2005

N2 - The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quantum dots sQDsd, emitting in the 1.55 µm wavelength region, is investigated by means of time-resolved pump-probe differential reflection spectroscopy at room temperature. We observe ultrafast carrier capture and subsequential carrier relaxation into the QD ground state within 2.5 ps. The carrier lifetime in the QDs strongly depends on the QD optical transition energy within the QD ensemble as well as the carrier density, and ranges from 560 up to 2600 ps.

AB - The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quantum dots sQDsd, emitting in the 1.55 µm wavelength region, is investigated by means of time-resolved pump-probe differential reflection spectroscopy at room temperature. We observe ultrafast carrier capture and subsequential carrier relaxation into the QD ground state within 2.5 ps. The carrier lifetime in the QDs strongly depends on the QD optical transition energy within the QD ensemble as well as the carrier density, and ranges from 560 up to 2600 ps.

U2 - 10.1063/1.1915527

DO - 10.1063/1.1915527

M3 - Article

VL - 86

SP - 173109-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 173109

ER -

Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 µm wavelength region

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