Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 µm wavelength region

E.W. Bogaart, R. Nötzel, Q. Gong, J.E.M. Haverkort, J.H. Wolter

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Abstract

The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quantum dots sQDsd, emitting in the 1.55 µm wavelength region, is investigated by means of time-resolved pump-probe differential reflection spectroscopy at room temperature. We observe ultrafast carrier capture and subsequential carrier relaxation into the QD ground state within 2.5 ps. The carrier lifetime in the QDs strongly depends on the QD optical transition energy within the QD ensemble as well as the carrier density, and ranges from 560 up to 2600 ps.
Original languageEnglish
Article number173109
Pages (from-to)173109-1/3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number17
DOIs
Publication statusPublished - 2005

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