Ultrafast atomic layer deposition of alumina layers for solar cell passivation

P. Poodt, V. Tiba, F. Werner, J. Schmidt, A.J.P.M. Vermeer, F. Roozeboom

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An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, by which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/h.
Original languageEnglish
Pages (from-to)H937-H940
JournalJournal of the Electrochemical Society
Issue number9
Publication statusPublished - 2011


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