Ultrafast atomic layer deposition of alumina layers for solar cell passivation

P. Poodt, A. Lankhorst, F. Roozeboom, M.V. Tiba, C.I.M.A. Spee, D. Maas, A.J.P.M. Vermeer

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, with which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high throughput ALD deposition tool is being developed towards throughputs of up to 3000 wafers/hr.
Original languageEnglish
Title of host publicationProceedings of the 218th ECS Meeting, 10-15 October, 2010, Las Vegas, USA
Pages419-427
DOIs
Publication statusPublished - 2010
Event218th Electrochemical Society Meeting (ECS 2010) - Las Vegas, United States
Duration: 10 Oct 201015 Oct 2010
Conference number: 218
https://www.electrochem.org/218

Publication series

NameECS Transactions
Volume33
ISSN (Print)1938-6737

Conference

Conference218th Electrochemical Society Meeting (ECS 2010)
Abbreviated titleECS 2010
CountryUnited States
CityLas Vegas
Period10/10/1015/10/10
Internet address

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