Ultra thin DVS-BCB adhesive bonding of III-V wafers dies and multiple dies to a patterned silicon-on-insulator substrate

S. Keyvaninia; M. Muneeb; S. Stankovic; P.J. Veldhoven, van; D. Thourhout, Van; G.C. Roelkens

doi:10.1364/OME.3.000035

Ultra thin DVS-BCB adhesive bonding of III-V wafers dies and multiple dies to a patterned silicon-on-insulator substrate

S. Keyvaninia, M. Muneeb, S. Stankovic, P.J. Veldhoven, van, D. Thourhout, Van, G.C. Roelkens

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Abstract

Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in silicon photonics. For this integration, it is essential to have a reliable and robust bonding procedure, which also provides a uniform and ultra-thin bonding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed silicon-on-insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. This "cold bonding" method significantly simplifies the bonding preparation for machine-based bonding both for die and wafer-scale bonding. High-quality bonding, with ultra-thin bonding layers (

Original language	English
Pages (from-to)	35-46
Journal	Optical Materials Express
Volume	3
Issue number	1
DOIs	https://doi.org/10.1364/OME.3.000035
Publication status	Published - 2013

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title = "Ultra thin DVS-BCB adhesive bonding of III-V wafers dies and multiple dies to a patterned silicon-on-insulator substrate",

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AU - Keyvaninia, S.

AU - Muneeb, M.

AU - Stankovic, S.

AU - Veldhoven, van, P.J.

AU - Thourhout, Van, D.

AU - Roelkens, G.C.

PY - 2013

Y1 - 2013

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AB - Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in silicon photonics. For this integration, it is essential to have a reliable and robust bonding procedure, which also provides a uniform and ultra-thin bonding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed silicon-on-insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. This "cold bonding" method significantly simplifies the bonding preparation for machine-based bonding both for die and wafer-scale bonding. High-quality bonding, with ultra-thin bonding layers (

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DO - 10.1364/OME.3.000035

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JF - Optical Materials Express

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Ultra thin DVS-BCB adhesive bonding of III-V wafers dies and multiple dies to a patterned silicon-on-insulator substrate

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