Ultra-thin aluminium oxide films deposited by plasma-enhanced atomic layer deposition for corrosion protection

S.E. Potts; L. Schmalz; M. Fenker; B. Díaz; J. Swiatowska; V. Maurice; A. Seyeux; P. Marcus; G. Radnóczi; L. Tóth; W.M.M. Kessels

doi:10.1149/1.3560197

Ultra-thin aluminium oxide films deposited by plasma-enhanced atomic layer deposition for corrosion protection

S.E. Potts, L. Schmalz, M. Fenker, B. Díaz, J. Swiatowska, V. Maurice, A. Seyeux, P. Marcus, G. Radnóczi, L. Tóth, W.M.M. Kessels

Plasma & Materials Processing

Research output: Contribution to journal › Article › Academic › peer-review

74 Citations (Scopus)

548 Downloads (Pure)

Abstract

We have employed plasma-enhanced and thermal atomic layer deposition (ALD) within the temperature range of 50–150°C for the deposition of ultra-thin (10–50 nm) Al2O3 films on 100Cr6 steel and aluminium Al2024-T3 alloys. [Al(CH3)3] was used as the precursor with either an O2 plasma or water as co-reactants. Neutral salt spray tests showed that the thicker films offered the best corrosion-resistance. Using cyclic voltametry, the 50 nm films were found to be the least porous (

Original language	English
Pages (from-to)	C132-C138
Number of pages	7
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	5
DOIs	https://doi.org/10.1149/1.3560197
Publication status	Published - 2011

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title = "Ultra-thin aluminium oxide films deposited by plasma-enhanced atomic layer deposition for corrosion protection",

abstract = "We have employed plasma-enhanced and thermal atomic layer deposition (ALD) within the temperature range of 50–150°C for the deposition of ultra-thin (10–50 nm) Al2O3 films on 100Cr6 steel and aluminium Al2024-T3 alloys. [Al(CH3)3] was used as the precursor with either an O2 plasma or water as co-reactants. Neutral salt spray tests showed that the thicker films offered the best corrosion-resistance. Using cyclic voltametry, the 50 nm films were found to be the least porous (",

author = "S.E. Potts and L. Schmalz and M. Fenker and B. D{\'i}az and J. Swiatowska and V. Maurice and A. Seyeux and P. Marcus and G. Radn{\'o}czi and L. T{\'o}th and W.M.M. Kessels",

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issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

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Ultra-thin aluminium oxide films deposited by plasma-enhanced atomic layer deposition for corrosion protection. / Potts, S.E.; Schmalz, L.; Fenker, M.; Díaz, B.; Swiatowska, J.; Maurice, V.; Seyeux, A.; Marcus, P.; Radnóczi, G.; Tóth, L.; Kessels, W.M.M.

In: Journal of the Electrochemical Society, Vol. 158, No. 5, 2011, p. C132-C138.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Ultra-thin aluminium oxide films deposited by plasma-enhanced atomic layer deposition for corrosion protection

AU - Potts, S.E.

AU - Schmalz, L.

AU - Fenker, M.

AU - Díaz, B.

AU - Swiatowska, J.

AU - Maurice, V.

AU - Seyeux, A.

AU - Marcus, P.

AU - Radnóczi, G.

AU - Tóth, L.

AU - Kessels, W.M.M.

PY - 2011

Y1 - 2011

N2 - We have employed plasma-enhanced and thermal atomic layer deposition (ALD) within the temperature range of 50–150°C for the deposition of ultra-thin (10–50 nm) Al2O3 films on 100Cr6 steel and aluminium Al2024-T3 alloys. [Al(CH3)3] was used as the precursor with either an O2 plasma or water as co-reactants. Neutral salt spray tests showed that the thicker films offered the best corrosion-resistance. Using cyclic voltametry, the 50 nm films were found to be the least porous (

AB - We have employed plasma-enhanced and thermal atomic layer deposition (ALD) within the temperature range of 50–150°C for the deposition of ultra-thin (10–50 nm) Al2O3 films on 100Cr6 steel and aluminium Al2024-T3 alloys. [Al(CH3)3] was used as the precursor with either an O2 plasma or water as co-reactants. Neutral salt spray tests showed that the thicker films offered the best corrosion-resistance. Using cyclic voltametry, the 50 nm films were found to be the least porous (

U2 - 10.1149/1.3560197

DO - 10.1149/1.3560197

M3 - Article

VL - 158

SP - C132-C138

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 5

ER -