Ultra-shallow junction formationby outdiffusion from implanted oxide

J. Schmitz, M. van Gestel, P.A. Stolk, Y.V. Ponomarev, F. Roozeboom, J.G.M. Berkum, van, P.C. Zalm, P.H. Woerlee

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)
1 Downloads (Pure)


We present a new method for the fabrication of shallow n/sup +/ and p/sup +/ junctions in silicon. The method consists of implanting a screening oxide followed by a diffusion step to drive the dopant into the silicon. This paper reports on the electrical and physical characteristics of these shallow junctions, and it show results obtained with sub-100 nm NMOS devices fabricated with these junctions.
Original languageEnglish
Title of host publicationProceedings of the IEDM, international electron devices meeting : technical digest, December 6-9, 1998, San Francisco, California, USA
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Print)0-7803-4774-9
Publication statusPublished - 1998
Event1998 IEEE International Electron Devices Meeting (IDEM 1998) - San Francisco, United States
Duration: 6 Dec 19989 Dec 1998


Conference1998 IEEE International Electron Devices Meeting (IDEM 1998)
Abbreviated titleIDEM 1998
CountryUnited States
CitySan Francisco

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