Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers

A. Higuera-Rodriguez, B. Romeira, S. Birindelli, L. Black, B. Smalbrugge, W. M.M. Kessels, M. K. Smit, A. Fiore

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

We investigated the passivation of III-V semiconductor nanostructures using wet-chemical ammonium sulfide treatment and SiOx encapsulation. We achieved an ultra-low surface recombination velocity value of ~530 cm/s enabling the future development of high-performance room-temperature nanolasers.

Original languageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2016
PublisherOptical Society of America (OSA)
Number of pages3
ISBN (Print)9781943580149
Publication statusPublished - 2016
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2016 - Vancouver, Canada
Duration: 18 Jul 201620 Jul 2016

Conference

ConferenceIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2016
CountryCanada
CityVancouver
Period18/07/1620/07/16

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