Abstract
We investigated the passivation of III-V semiconductor nanostructures using wet-chemical ammonium sulfide treatment and SiOx encapsulation. We achieved an ultra-low surface recombination velocity value of ~530 cm/s enabling the future development of high-performance room-temperature nanolasers.
Original language | English |
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Title of host publication | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2016 |
Publisher | Optical Society of America (OSA) |
Number of pages | 3 |
ISBN (Print) | 9781943580149 |
Publication status | Published - 2016 |
Event | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2016 - Vancouver, Canada Duration: 18 Jul 2016 → 20 Jul 2016 |
Conference
Conference | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2016 |
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Country/Territory | Canada |
City | Vancouver |
Period | 18/07/16 → 20/07/16 |