Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers

A. Higuera Rodriguez, B.M. Patarata Romeira, S. Birindelli, L.E. Black, E. Smalbrugge, W.M.M. Kessels, M.K. Smit, A. Fiore

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Abstract

We investigated the passivation of III-V nanostructures using ammonium sulfide and SiOx encapsulation. We achieved ultra-low surface recombination velocity of 530 cm/s enabling the future development of high-performance room-temperature nanolasers.
Original languageEnglish
Title of host publicationProceedings Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF)
Place of PublicationWashington
PublisherOSA Publishing
Number of pages3
ISBN (Electronic)978-1-943580-14-9
DOIs
Publication statusPublished - 2016
EventAdvanced Photonics Congress 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF) © OSA 2016 - Canada, Vancouver, Canada
Duration: 18 Jul 201620 Jul 2016

Conference

ConferenceAdvanced Photonics Congress 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF) © OSA 2016
CountryCanada
CityVancouver
Period18/07/1620/07/16

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    Higuera Rodriguez, A., Patarata Romeira, B. M., Birindelli, S., Black, L. E., Smalbrugge, E., Kessels, W. M. M., Smit, M. K., & Fiore, A. (2016). Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers. In Proceedings Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF) [ITu2A.2] OSA Publishing. https://doi.org/10.1364/IPRSN.2016.ITu2A.2