Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers

A. Higuera Rodriguez; B.M. Patarata Romeira; S. Birindelli; L.E. Black; E. Smalbrugge; W.M.M. Kessels; M.K. Smit; A. Fiore

doi:10.1364/IPRSN.2016.ITu2A.2

Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers

A. Higuera Rodriguez, B.M. Patarata Romeira, S. Birindelli, L.E. Black, E. Smalbrugge, W.M.M. Kessels, M.K. Smit, A. Fiore

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

262 Downloads (Pure)

Abstract

We investigated the passivation of III-V nanostructures using ammonium sulfide and SiOx encapsulation. We achieved ultra-low surface recombination velocity of 530 cm/s enabling the future development of high-performance room-temperature nanolasers.

Original language	English
Title of host publication	Proceedings Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF)
Place of Publication	Washington
Publisher	OSA Publishing
Number of pages	3
ISBN (Electronic)	978-1-943580-14-9
DOIs	https://doi.org/10.1364/IPRSN.2016.ITu2A.2
Publication status	Published - 2016
Event	Advanced Photonics Congress 2016 - Vancouver, Canada Duration: 18 Jul 2016 → 20 Jul 2016

Conference

Conference	Advanced Photonics Congress 2016
Country/Territory	Canada
City	Vancouver
Period	18/07/16 → 20/07/16

Access to Document

10.1364/IPRSN.2016.ITu2A.2

publisher versionFinal published version, 377 KB

Cite this

Higuera Rodriguez, A., Patarata Romeira, B. M., Birindelli, S., Black, L. E., Smalbrugge, E., Kessels, W. M. M., Smit, M. K., & Fiore, A. (2016). Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers. In Proceedings Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF) [ITu2A.2] OSA Publishing. https://doi.org/10.1364/IPRSN.2016.ITu2A.2

@inproceedings{89d9cc7f4dd44d8882fb1dfa356d21fa,

title = "Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers",

abstract = "We investigated the passivation of III-V nanostructures using ammonium sulfide and SiOx encapsulation. We achieved ultra-low surface recombination velocity of 530 cm/s enabling the future development of high-performance room-temperature nanolasers.",

author = "{Higuera Rodriguez}, A. and {Patarata Romeira}, B.M. and S. Birindelli and L.E. Black and E. Smalbrugge and W.M.M. Kessels and M.K. Smit and A. Fiore",

year = "2016",

doi = "10.1364/IPRSN.2016.ITu2A.2",

language = "English",

booktitle = "Proceedings Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF)",

publisher = "OSA Publishing",

address = "United States",

note = "Advanced Photonics Congress 2016 ; Conference date: 18-07-2016 Through 20-07-2016",

}

Higuera Rodriguez, A, Patarata Romeira, BM, Birindelli, S, Black, LE, Smalbrugge, E, Kessels, WMM , Smit, MK & Fiore, A 2016, Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers. in Proceedings Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF)., ITu2A.2, OSA Publishing, Washington, Advanced Photonics Congress 2016 , Vancouver, British Columbia, Canada, 18/07/16. https://doi.org/10.1364/IPRSN.2016.ITu2A.2

Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers. / Higuera Rodriguez, A.; Patarata Romeira, B.M.; Birindelli, S. et al.

Proceedings Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF). Washington : OSA Publishing, 2016. ITu2A.2.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers

AU - Higuera Rodriguez, A.

AU - Patarata Romeira, B.M.

AU - Birindelli, S.

AU - Black, L.E.

AU - Smalbrugge, E.

AU - Kessels, W.M.M.

AU - Smit, M.K.

AU - Fiore, A.

PY - 2016

Y1 - 2016

N2 - We investigated the passivation of III-V nanostructures using ammonium sulfide and SiOx encapsulation. We achieved ultra-low surface recombination velocity of 530 cm/s enabling the future development of high-performance room-temperature nanolasers.

AB - We investigated the passivation of III-V nanostructures using ammonium sulfide and SiOx encapsulation. We achieved ultra-low surface recombination velocity of 530 cm/s enabling the future development of high-performance room-temperature nanolasers.

U2 - 10.1364/IPRSN.2016.ITu2A.2

DO - 10.1364/IPRSN.2016.ITu2A.2

M3 - Conference contribution

BT - Proceedings Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF)

PB - OSA Publishing

CY - Washington

T2 - Advanced Photonics Congress 2016

Y2 - 18 July 2016 through 20 July 2016

ER -

Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers

Abstract

Conference

Access to Document

Fingerprint

Cite this