Ultra-low standby-currents for deep sub-micron VLSI CMOS circuits : smart series switch

P.R. Meer, van der, A. Staveren, van, A.H.M. Roermund, van

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

The Smart Series Switch ("Triple-S") technique provides, for present and future deep-sub-micron technologies, in standby mode for 5 decades leakage-current reduction while retaining circuit states by using a two-transistor series switch with a smart combination of state and mode dependency and high and low thresholds
Original languageEnglish
Title of host publicationISCAS, International Symposium on Circuits and Systems, 2000
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
PagesIV-1/4
Volume4
ISBN (Print)0-7803-5482-6
DOIs
Publication statusPublished - 2000

Fingerprint

Dive into the research topics of 'Ultra-low standby-currents for deep sub-micron VLSI CMOS circuits : smart series switch'. Together they form a unique fingerprint.

Cite this