Ultra-high gain diffusion-driven organic transistor

F. Torricelli, L. Colalongo, D. Raiteri, Z.M. Kovacs-Vajna, E. Cantatore

Research output: Contribution to journalArticleAcademicpeer-review

41 Citations (Scopus)
125 Downloads (Pure)

Abstract

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal-semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

Original languageEnglish
Article number10550
Pages (from-to)1-9
JournalNature Communications
Volume7
DOIs
Publication statusPublished - 1 Feb 2016

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