Twofold origin of strain-induced bending in core-shell nanowires: The GaP/InGaP case

Luca Gagliano, Marco Albani, Marcel A. Verheijen, Erik P.A.M. Bakkers, Leo Miglio

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Abstract

Nanowires have emerged as a promising platform for the development of novel and high-quality heterostructures at large lattice misfit, inaccessible in a thin film configuration. However, despite core-shell nanowires allowing a very efficient elastic release of the misfit strain, the growth of highly uniform arrays of nanowire heterostructures still represents a challenge, for example due to a strain-induced bending morphology. Here we investigate the bending of wurtzite GaP/In x Ga1-xP core-shell nanowires using transmission electron microscopy and energy dispersive x-ray spectroscopy, both in terms of geometric and compositional asymmetry with respect to the longitudinal axis. We compare the experimental data with finite element method simulations in three dimensions, showing that both asymmetries are responsible for the actual bending. Such findings are valid for all lattice-mismatched core-shell nanowire heterostructures based on ternary alloys. Our work provides a quantitative understanding of the bending effect in general while also suggesting a strategy to minimise it.

Original languageEnglish
Article number315703
Number of pages8
JournalNanotechnology
Volume29
Issue number31
DOIs
Publication statusPublished - 31 May 2018

Fingerprint

Nanowires
Heterojunctions
Ternary alloys
Spectroscopy
Transmission electron microscopy
Finite element method
X rays
Thin films

Keywords

  • bending
  • core
  • semiconductor nanowire
  • shell
  • strain
  • wurtzite

Cite this

@article{a273986672eb4438931c54470acee62d,
title = "Twofold origin of strain-induced bending in core-shell nanowires: The GaP/InGaP case",
abstract = "Nanowires have emerged as a promising platform for the development of novel and high-quality heterostructures at large lattice misfit, inaccessible in a thin film configuration. However, despite core-shell nanowires allowing a very efficient elastic release of the misfit strain, the growth of highly uniform arrays of nanowire heterostructures still represents a challenge, for example due to a strain-induced bending morphology. Here we investigate the bending of wurtzite GaP/In x Ga1-xP core-shell nanowires using transmission electron microscopy and energy dispersive x-ray spectroscopy, both in terms of geometric and compositional asymmetry with respect to the longitudinal axis. We compare the experimental data with finite element method simulations in three dimensions, showing that both asymmetries are responsible for the actual bending. Such findings are valid for all lattice-mismatched core-shell nanowire heterostructures based on ternary alloys. Our work provides a quantitative understanding of the bending effect in general while also suggesting a strategy to minimise it.",
keywords = "bending, core, semiconductor nanowire, shell, strain, wurtzite",
author = "Luca Gagliano and Marco Albani and Verheijen, {Marcel A.} and Bakkers, {Erik P.A.M.} and Leo Miglio",
year = "2018",
month = "5",
day = "31",
doi = "10.1088/1361-6528/aac417",
language = "English",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "Institute of Physics",
number = "31",

}

Twofold origin of strain-induced bending in core-shell nanowires : The GaP/InGaP case. / Gagliano, Luca; Albani, Marco; Verheijen, Marcel A.; Bakkers, Erik P.A.M.; Miglio, Leo.

In: Nanotechnology, Vol. 29, No. 31, 315703, 31.05.2018.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Twofold origin of strain-induced bending in core-shell nanowires

T2 - The GaP/InGaP case

AU - Gagliano, Luca

AU - Albani, Marco

AU - Verheijen, Marcel A.

AU - Bakkers, Erik P.A.M.

AU - Miglio, Leo

PY - 2018/5/31

Y1 - 2018/5/31

N2 - Nanowires have emerged as a promising platform for the development of novel and high-quality heterostructures at large lattice misfit, inaccessible in a thin film configuration. However, despite core-shell nanowires allowing a very efficient elastic release of the misfit strain, the growth of highly uniform arrays of nanowire heterostructures still represents a challenge, for example due to a strain-induced bending morphology. Here we investigate the bending of wurtzite GaP/In x Ga1-xP core-shell nanowires using transmission electron microscopy and energy dispersive x-ray spectroscopy, both in terms of geometric and compositional asymmetry with respect to the longitudinal axis. We compare the experimental data with finite element method simulations in three dimensions, showing that both asymmetries are responsible for the actual bending. Such findings are valid for all lattice-mismatched core-shell nanowire heterostructures based on ternary alloys. Our work provides a quantitative understanding of the bending effect in general while also suggesting a strategy to minimise it.

AB - Nanowires have emerged as a promising platform for the development of novel and high-quality heterostructures at large lattice misfit, inaccessible in a thin film configuration. However, despite core-shell nanowires allowing a very efficient elastic release of the misfit strain, the growth of highly uniform arrays of nanowire heterostructures still represents a challenge, for example due to a strain-induced bending morphology. Here we investigate the bending of wurtzite GaP/In x Ga1-xP core-shell nanowires using transmission electron microscopy and energy dispersive x-ray spectroscopy, both in terms of geometric and compositional asymmetry with respect to the longitudinal axis. We compare the experimental data with finite element method simulations in three dimensions, showing that both asymmetries are responsible for the actual bending. Such findings are valid for all lattice-mismatched core-shell nanowire heterostructures based on ternary alloys. Our work provides a quantitative understanding of the bending effect in general while also suggesting a strategy to minimise it.

KW - bending

KW - core

KW - semiconductor nanowire

KW - shell

KW - strain

KW - wurtzite

UR - http://www.scopus.com/inward/record.url?scp=85048320915&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aac417

DO - 10.1088/1361-6528/aac417

M3 - Article

C2 - 29749960

AN - SCOPUS:85048320915

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 31

M1 - 315703

ER -