Two-period magneto-oscillations in coherent double barrier-resonant tunnelling

H.J.M.F. Noteborn; G.H.M. van Tartwijk; H.P. Joosten; D. Lenstra

doi:10.1088/0953-8984/3/23/013

Two-period magneto-oscillations in coherent double barrier-resonant tunnelling

H.J.M.F. Noteborn
, G.H.M. van Tartwijk
, H.P. Joosten
, D. Lenstra

Applied Physics and Science Education

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

Applying a magnetic field B to a double-barrier resonant-tunnelling diode, perpendicular to the layer structure, introduces oscillations in current density and capacitance that are periodic in 1/B. A derivation of this periodicity is given, based on coherent wave propagation. Two magneto-periods are found, corresponding to the electron concentration in emitter and well, respectively. Numerical calculations are presented for a semiconductor model with self-consistently determined electron potential.

Original language	English
Article number	013
Pages (from-to)	4249-4256
Number of pages	8
Journal	Journal of Physics: Condensed Matter
Volume	3
Issue number	23
DOIs	https://doi.org/10.1088/0953-8984/3/23/013
Publication status	Published - 1 Dec 1991

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abstract = "Applying a magnetic field B to a double-barrier resonant-tunnelling diode, perpendicular to the layer structure, introduces oscillations in current density and capacitance that are periodic in 1/B. A derivation of this periodicity is given, based on coherent wave propagation. Two magneto-periods are found, corresponding to the electron concentration in emitter and well, respectively. Numerical calculations are presented for a semiconductor model with self-consistently determined electron potential.",

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AU - Lenstra, D.

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AB - Applying a magnetic field B to a double-barrier resonant-tunnelling diode, perpendicular to the layer structure, introduces oscillations in current density and capacitance that are periodic in 1/B. A derivation of this periodicity is given, based on coherent wave propagation. Two magneto-periods are found, corresponding to the electron concentration in emitter and well, respectively. Numerical calculations are presented for a semiconductor model with self-consistently determined electron potential.

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Two-period magneto-oscillations in coherent double barrier-resonant tunnelling

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