Abstract
The invention discloses a turn-off high-impedance wide bandgap power device driving crosstalk voltage suppression method, which is characterized in that a clamping switch circuit is connected in parallel on the basis of a traditional driving circuit structure so as to realize control of gate pole loop impedance under the turn-off of a device. According to the suppression method provided by the invention, a crosstalk voltage introduced by a Miller capacitor and a common source inductor of a power semiconductor device is suppressed at the same time by setting the impedance and the pre-charging level of a high gate pole loop in a turn-off state, and defects of a traditional low-impedance loop crosstalk voltage suppression method are overcome. The invention provides a control signal generationmode of each auxiliary switch tube of a high-turn-off configuration driving circuit and an auxiliary power supply circuit realized by a bootstrap circuit so as to reduce complexity of the method andreduce cost. The wide bandgap power semiconductor half-bridge module can be further designed on the basis of the proposed crosstalk voltage suppression circuit.
| Original language | English |
|---|---|
| Patent number | CN111525780 |
| IPC | H02M 1/ 32 A I,H02M1/08 |
| Priority date | 16/03/20 |
| Publication status | Published - 11 Aug 2020 |
| Externally published | Yes |
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