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Turn-off high-impedance wide bandgap power device driving crosstalk voltage suppression circuit, method and device

  • 李武华 Wuhua Li (Inventor)
  • , 李成敏 Chengmin Li (Inventor)
  • , 鲁哲别 Zhebie Lu (Inventor)
  • , 罗皓泽 Haoze Luo (Inventor)
  • , 杨贺雅 Heya Yang (Inventor)
  • , 李楚杉 Chushan Li (Inventor)
  • , 何湘宁 Xiangning He (Inventor)

Research output: Patent › Patent publication

Abstract

The invention discloses a turn-off high-impedance wide bandgap power device driving crosstalk voltage suppression method, which is characterized in that a clamping switch circuit is connected in parallel on the basis of a traditional driving circuit structure so as to realize control of gate pole loop impedance under the turn-off of a device. According to the suppression method provided by the invention, a crosstalk voltage introduced by a Miller capacitor and a common source inductor of a power semiconductor device is suppressed at the same time by setting the impedance and the pre-charging level of a high gate pole loop in a turn-off state, and defects of a traditional low-impedance loop crosstalk voltage suppression method are overcome. The invention provides a control signal generationmode of each auxiliary switch tube of a high-turn-off configuration driving circuit and an auxiliary power supply circuit realized by a bootstrap circuit so as to reduce complexity of the method andreduce cost. The wide bandgap power semiconductor half-bridge module can be further designed on the basis of the proposed crosstalk voltage suppression circuit.

Original languageEnglish
Patent numberCN111525780
IPCH02M 1/ 32 A I,H02M1/08
Priority date16/03/20
Publication statusPublished - 11 Aug 2020
Externally publishedYes

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