Tunneling spectroscopy at nanometer scale in MBE-grown (Al)GaAs multilayers

O. Albrektsen, P.M. Koenraad, H.W.M. Salemink

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Original language	English
Title of host publication	Physical concepts of materials for novel optoelectronic device applications I (1990)
Publisher	SPIE
Pages	338-342
DOIs	https://doi.org/10.1117/12.24365
Publication status	Published - 1991

Access to Document

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title = "Tunneling spectroscopy at nanometer scale in MBE-grown (Al)GaAs multilayers",

author = "O. Albrektsen and P.M. Koenraad and H.W.M. Salemink",

year = "1991",

doi = "10.1117/12.24365",

language = "English",

series = "Proceedings of SPIE",

publisher = "SPIE",

pages = "338--342",

booktitle = "Physical concepts of materials for novel optoelectronic device applications I (1990)",

address = "United States",

}

Tunneling spectroscopy at nanometer scale in MBE-grown (Al)GaAs multilayers. / Albrektsen, O.; Koenraad, P.M.; Salemink, H.W.M.
Physical concepts of materials for novel optoelectronic device applications I (1990). SPIE, 1991. p. 338-342 (Proceedings of SPIE; Vol. 1361).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Tunneling spectroscopy at nanometer scale in MBE-grown (Al)GaAs multilayers

AU - Albrektsen, O.

AU - Koenraad, P.M.

AU - Salemink, H.W.M.

PY - 1991

Y1 - 1991

U2 - 10.1117/12.24365

DO - 10.1117/12.24365

M3 - Conference contribution

T3 - Proceedings of SPIE

SP - 338

EP - 342

BT - Physical concepts of materials for novel optoelectronic device applications I (1990)

PB - SPIE

ER -