Tunnel conductance as a probe of spin polarization decay in Cu dusted Co/Al2O3/Co tunnel junctions

P.R. LeClair; H.J.M. Swagten; J.T. Kohlhepp; W.J.M. Jonge, de

doi:10.1063/1.126780

Tunnel conductance as a probe of spin polarization decay in Cu dusted Co/Al2O3/Co tunnel junctions

P.R. LeClair, H.J.M. Swagten, J.T. Kohlhepp, W.J.M. Jonge, de

Physics of Nanostructures

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Abstract

Tunneling magnetoresistance (TMR), dynamic resistance and bias dependence measurements were performed on Co/Al2O3/Co magnetic tunnel junctions with a thin Cu layer inserted at either the Co/Al2O3 ("bottom") or Al2O3/Co ("top") interfaces. Careful comparative analysis allows detailed growth characteristics to be elucidated, as well as providing information on the underlying mechanisms behind spin polarized transport in these structures. Conductance for top dusted junctions is indicative of parallel Co/Al2O3/Co and Co/Al2O3/Cu junctions, consistent with three-dimensional growth of Co and Cu on Al2O3, while conductance for bottom dusted junctions show novel behavior dissimilar to either type of junction. The bias dependence of the TMR, surprisingly, is unaffected by either type of dusting. ©2000 American Institute of Physics.

Original language	English
Pages (from-to)	3783-3785
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	25
DOIs	https://doi.org/10.1063/1.126780
Publication status	Published - 2000

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title = "Tunnel conductance as a probe of spin polarization decay in Cu dusted Co/Al2O3/Co tunnel junctions",

abstract = "Tunneling magnetoresistance (TMR), dynamic resistance and bias dependence measurements were performed on Co/Al2O3/Co magnetic tunnel junctions with a thin Cu layer inserted at either the Co/Al2O3 ({"}bottom{"}) or Al2O3/Co ({"}top{"}) interfaces. Careful comparative analysis allows detailed growth characteristics to be elucidated, as well as providing information on the underlying mechanisms behind spin polarized transport in these structures. Conductance for top dusted junctions is indicative of parallel Co/Al2O3/Co and Co/Al2O3/Cu junctions, consistent with three-dimensional growth of Co and Cu on Al2O3, while conductance for bottom dusted junctions show novel behavior dissimilar to either type of junction. The bias dependence of the TMR, surprisingly, is unaffected by either type of dusting. {\textcopyright}2000 American Institute of Physics.",

author = "P.R. LeClair and H.J.M. Swagten and J.T. Kohlhepp and {Jonge, de}, W.J.M.",

year = "2000",

doi = "10.1063/1.126780",

language = "English",

volume = "76",

pages = "3783--3785",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Tunnel conductance as a probe of spin polarization decay in Cu dusted Co/Al2O3/Co tunnel junctions

AU - LeClair, P.R.

AU - Swagten, H.J.M.

AU - Kohlhepp, J.T.

AU - Jonge, de, W.J.M.

PY - 2000

Y1 - 2000

N2 - Tunneling magnetoresistance (TMR), dynamic resistance and bias dependence measurements were performed on Co/Al2O3/Co magnetic tunnel junctions with a thin Cu layer inserted at either the Co/Al2O3 ("bottom") or Al2O3/Co ("top") interfaces. Careful comparative analysis allows detailed growth characteristics to be elucidated, as well as providing information on the underlying mechanisms behind spin polarized transport in these structures. Conductance for top dusted junctions is indicative of parallel Co/Al2O3/Co and Co/Al2O3/Cu junctions, consistent with three-dimensional growth of Co and Cu on Al2O3, while conductance for bottom dusted junctions show novel behavior dissimilar to either type of junction. The bias dependence of the TMR, surprisingly, is unaffected by either type of dusting. ©2000 American Institute of Physics.

AB - Tunneling magnetoresistance (TMR), dynamic resistance and bias dependence measurements were performed on Co/Al2O3/Co magnetic tunnel junctions with a thin Cu layer inserted at either the Co/Al2O3 ("bottom") or Al2O3/Co ("top") interfaces. Careful comparative analysis allows detailed growth characteristics to be elucidated, as well as providing information on the underlying mechanisms behind spin polarized transport in these structures. Conductance for top dusted junctions is indicative of parallel Co/Al2O3/Co and Co/Al2O3/Cu junctions, consistent with three-dimensional growth of Co and Cu on Al2O3, while conductance for bottom dusted junctions show novel behavior dissimilar to either type of junction. The bias dependence of the TMR, surprisingly, is unaffected by either type of dusting. ©2000 American Institute of Physics.

U2 - 10.1063/1.126780

DO - 10.1063/1.126780

M3 - Article

SN - 0003-6951

VL - 76

SP - 3783

EP - 3785

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Tunnel conductance as a probe of spin polarization decay in Cu dusted Co/Al2O3/Co tunnel junctions

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