Tuning organic magnetoresistance in polymer-fullerene blends by controlling spin reaction pathways

Paul Janssen, M. Cox, S.H.W. Wouters, M. Kemerink, M.M. Wienk, B. Koopmans

Research output: Contribution to journalArticleAcademicpeer-review

71 Citations (Scopus)

Abstract

Harnessing the spin degree of freedom in semiconductors is generally a challenging, yet rewarding task. In recent years, the large effect of a small magnetic field on the current in organic semiconductors has puzzled the young field of organic spintronics. Although the microscopic interaction mechanisms between spin-carrying particles in organic materials are well understood nowadays, there is no consensus as to which pairs of spin-carrying particles are actually influencing the current in such a drastic manner. Here we demonstrate that the spin-based particle reactions can be tuned in a blend of organic materials, and microscopic mechanisms are identified using magnetoresistance lineshapes and voltage dependencies as fingerprints. We find that different mechanisms can dominate, depending on the exact materials choice, morphology and operating conditions. Our improved understanding will contribute to the future control of magnetic field effects in organic semiconductors.
LanguageEnglish
Article number2286
Number of pages8
JournalNature Communications
Volume4
DOIs
StatePublished - 2013

Fingerprint

Fullerenes
Semiconductors
Magnetoresistance
fullerenes
Polymers
Semiconducting organic compounds
Tuning
tuning
Magnetic Fields
polymers
organic semiconductors
organic materials
Magnetic field effects
Magnetoelectronics
Dermatoglyphics
magnetic fields
Semiconductor materials
Magnetic fields
degrees of freedom
Electric potential

Cite this

@article{6c77fa3ae8a64d9f8140eb5849750530,
title = "Tuning organic magnetoresistance in polymer-fullerene blends by controlling spin reaction pathways",
abstract = "Harnessing the spin degree of freedom in semiconductors is generally a challenging, yet rewarding task. In recent years, the large effect of a small magnetic field on the current in organic semiconductors has puzzled the young field of organic spintronics. Although the microscopic interaction mechanisms between spin-carrying particles in organic materials are well understood nowadays, there is no consensus as to which pairs of spin-carrying particles are actually influencing the current in such a drastic manner. Here we demonstrate that the spin-based particle reactions can be tuned in a blend of organic materials, and microscopic mechanisms are identified using magnetoresistance lineshapes and voltage dependencies as fingerprints. We find that different mechanisms can dominate, depending on the exact materials choice, morphology and operating conditions. Our improved understanding will contribute to the future control of magnetic field effects in organic semiconductors.",
author = "Paul Janssen and M. Cox and S.H.W. Wouters and M. Kemerink and M.M. Wienk and B. Koopmans",
year = "2013",
doi = "10.1038/ncomms3286",
language = "English",
volume = "4",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",

}

Tuning organic magnetoresistance in polymer-fullerene blends by controlling spin reaction pathways. / Janssen, Paul; Cox, M.; Wouters, S.H.W.; Kemerink, M.; Wienk, M.M.; Koopmans, B.

In: Nature Communications, Vol. 4, 2286, 2013.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Tuning organic magnetoresistance in polymer-fullerene blends by controlling spin reaction pathways

AU - Janssen,Paul

AU - Cox,M.

AU - Wouters,S.H.W.

AU - Kemerink,M.

AU - Wienk,M.M.

AU - Koopmans,B.

PY - 2013

Y1 - 2013

N2 - Harnessing the spin degree of freedom in semiconductors is generally a challenging, yet rewarding task. In recent years, the large effect of a small magnetic field on the current in organic semiconductors has puzzled the young field of organic spintronics. Although the microscopic interaction mechanisms between spin-carrying particles in organic materials are well understood nowadays, there is no consensus as to which pairs of spin-carrying particles are actually influencing the current in such a drastic manner. Here we demonstrate that the spin-based particle reactions can be tuned in a blend of organic materials, and microscopic mechanisms are identified using magnetoresistance lineshapes and voltage dependencies as fingerprints. We find that different mechanisms can dominate, depending on the exact materials choice, morphology and operating conditions. Our improved understanding will contribute to the future control of magnetic field effects in organic semiconductors.

AB - Harnessing the spin degree of freedom in semiconductors is generally a challenging, yet rewarding task. In recent years, the large effect of a small magnetic field on the current in organic semiconductors has puzzled the young field of organic spintronics. Although the microscopic interaction mechanisms between spin-carrying particles in organic materials are well understood nowadays, there is no consensus as to which pairs of spin-carrying particles are actually influencing the current in such a drastic manner. Here we demonstrate that the spin-based particle reactions can be tuned in a blend of organic materials, and microscopic mechanisms are identified using magnetoresistance lineshapes and voltage dependencies as fingerprints. We find that different mechanisms can dominate, depending on the exact materials choice, morphology and operating conditions. Our improved understanding will contribute to the future control of magnetic field effects in organic semiconductors.

U2 - 10.1038/ncomms3286

DO - 10.1038/ncomms3286

M3 - Article

VL - 4

JO - Nature Communications

T2 - Nature Communications

JF - Nature Communications

SN - 2041-1723

M1 - 2286

ER -