Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 µm applications

J.X. Chen, A. Markus, A. Fiore, U. Oesterle, R.P. Stanley, J.F. Carlin, R. Houdré, M. Ilegems, L. Lazzarini, L. Nasi, M.T. Todaro, E. Piscopiello, R. Cingolani, M. Catalano, J. Katcki, J. Ratajczak

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Abstract

The authors present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by MBE. The dot d. is significantly reduced 1.9 * 1010-0.6 * 1010 cm-2 as the growth rate decreases from 0.075 to 0.019 ML/s, while the island size becomes larger. Correspondingly, the emission wavelength shifts to the longer side. By increasing the In fraction in the InGaAs capping layer, the emission wavelength increases further. At In fraction of 0.3, a ground state transition wavelength as long as 1.4 micro m with the excited state transition wavelength of .apprx.1.3 micro m was achieved in the authors' dots. The optical properties of QDs with a ground state transition wavelength of 1.3 micro m but with different growth techniques were compared. The QDs grown with higher rate and embedded by InGaAs have a higher intensity satn. level from excitation dependent photoluminescence measurements and a smaller intensity decrease from temp. dependent measurements. Finally, single mirror light emitting diodes with a QD embedded in InGaAs were fabricated. The quantum efficiency at room temp. is 1.3%, corresponding to a radiative efficiency of 21.5%. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)6710-6716
Number of pages7
JournalJournal of Applied Physics
Volume91
Issue number10, Pt. 1
DOIs
Publication statusPublished - 2002

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tuning
quantum dots
wavelengths
optical properties
ground state
excitation
rooms
quantum efficiency
light emitting diodes
mirrors
photoluminescence
shift

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Chen, J. X., Markus, A., Fiore, A., Oesterle, U., Stanley, R. P., Carlin, J. F., ... Ratajczak, J. (2002). Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 µm applications. Journal of Applied Physics, 91(10, Pt. 1), 6710-6716. https://doi.org/10.1063/1.1476069
Chen, J.X. ; Markus, A. ; Fiore, A. ; Oesterle, U. ; Stanley, R.P. ; Carlin, J.F. ; Houdré, R. ; Ilegems, M. ; Lazzarini, L. ; Nasi, L. ; Todaro, M.T. ; Piscopiello, E. ; Cingolani, R. ; Catalano, M. ; Katcki, J. ; Ratajczak, J. / Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 µm applications. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 10, Pt. 1. pp. 6710-6716.
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title = "Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 µm applications",
abstract = "The authors present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by MBE. The dot d. is significantly reduced 1.9 * 1010-0.6 * 1010 cm-2 as the growth rate decreases from 0.075 to 0.019 ML/s, while the island size becomes larger. Correspondingly, the emission wavelength shifts to the longer side. By increasing the In fraction in the InGaAs capping layer, the emission wavelength increases further. At In fraction of 0.3, a ground state transition wavelength as long as 1.4 micro m with the excited state transition wavelength of .apprx.1.3 micro m was achieved in the authors' dots. The optical properties of QDs with a ground state transition wavelength of 1.3 micro m but with different growth techniques were compared. The QDs grown with higher rate and embedded by InGaAs have a higher intensity satn. level from excitation dependent photoluminescence measurements and a smaller intensity decrease from temp. dependent measurements. Finally, single mirror light emitting diodes with a QD embedded in InGaAs were fabricated. The quantum efficiency at room temp. is 1.3{\%}, corresponding to a radiative efficiency of 21.5{\%}. [on SciFinder (R)]",
author = "J.X. Chen and A. Markus and A. Fiore and U. Oesterle and R.P. Stanley and J.F. Carlin and R. Houdr{\'e} and M. Ilegems and L. Lazzarini and L. Nasi and M.T. Todaro and E. Piscopiello and R. Cingolani and M. Catalano and J. Katcki and J. Ratajczak",
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language = "English",
volume = "91",
pages = "6710--6716",
journal = "Journal of Applied Physics",
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Chen, JX, Markus, A, Fiore, A, Oesterle, U, Stanley, RP, Carlin, JF, Houdré, R, Ilegems, M, Lazzarini, L, Nasi, L, Todaro, MT, Piscopiello, E, Cingolani, R, Catalano, M, Katcki, J & Ratajczak, J 2002, 'Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 µm applications', Journal of Applied Physics, vol. 91, no. 10, Pt. 1, pp. 6710-6716. https://doi.org/10.1063/1.1476069

Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 µm applications. / Chen, J.X.; Markus, A.; Fiore, A.; Oesterle, U.; Stanley, R.P.; Carlin, J.F.; Houdré, R.; Ilegems, M.; Lazzarini, L.; Nasi, L.; Todaro, M.T.; Piscopiello, E.; Cingolani, R.; Catalano, M.; Katcki, J.; Ratajczak, J.

In: Journal of Applied Physics, Vol. 91, No. 10, Pt. 1, 2002, p. 6710-6716.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 µm applications

AU - Chen, J.X.

AU - Markus, A.

AU - Fiore, A.

AU - Oesterle, U.

AU - Stanley, R.P.

AU - Carlin, J.F.

AU - Houdré, R.

AU - Ilegems, M.

AU - Lazzarini, L.

AU - Nasi, L.

AU - Todaro, M.T.

AU - Piscopiello, E.

AU - Cingolani, R.

AU - Catalano, M.

AU - Katcki, J.

AU - Ratajczak, J.

PY - 2002

Y1 - 2002

N2 - The authors present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by MBE. The dot d. is significantly reduced 1.9 * 1010-0.6 * 1010 cm-2 as the growth rate decreases from 0.075 to 0.019 ML/s, while the island size becomes larger. Correspondingly, the emission wavelength shifts to the longer side. By increasing the In fraction in the InGaAs capping layer, the emission wavelength increases further. At In fraction of 0.3, a ground state transition wavelength as long as 1.4 micro m with the excited state transition wavelength of .apprx.1.3 micro m was achieved in the authors' dots. The optical properties of QDs with a ground state transition wavelength of 1.3 micro m but with different growth techniques were compared. The QDs grown with higher rate and embedded by InGaAs have a higher intensity satn. level from excitation dependent photoluminescence measurements and a smaller intensity decrease from temp. dependent measurements. Finally, single mirror light emitting diodes with a QD embedded in InGaAs were fabricated. The quantum efficiency at room temp. is 1.3%, corresponding to a radiative efficiency of 21.5%. [on SciFinder (R)]

AB - The authors present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by MBE. The dot d. is significantly reduced 1.9 * 1010-0.6 * 1010 cm-2 as the growth rate decreases from 0.075 to 0.019 ML/s, while the island size becomes larger. Correspondingly, the emission wavelength shifts to the longer side. By increasing the In fraction in the InGaAs capping layer, the emission wavelength increases further. At In fraction of 0.3, a ground state transition wavelength as long as 1.4 micro m with the excited state transition wavelength of .apprx.1.3 micro m was achieved in the authors' dots. The optical properties of QDs with a ground state transition wavelength of 1.3 micro m but with different growth techniques were compared. The QDs grown with higher rate and embedded by InGaAs have a higher intensity satn. level from excitation dependent photoluminescence measurements and a smaller intensity decrease from temp. dependent measurements. Finally, single mirror light emitting diodes with a QD embedded in InGaAs were fabricated. The quantum efficiency at room temp. is 1.3%, corresponding to a radiative efficiency of 21.5%. [on SciFinder (R)]

U2 - 10.1063/1.1476069

DO - 10.1063/1.1476069

M3 - Article

VL - 91

SP - 6710

EP - 6716

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10, Pt. 1

ER -