Trends in high speed interconnects: InP monolithic integration

K. Williams, B. Docter

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

1 Citation (Scopus)

Abstract

InP PIC technologies offer unsurpassed optoelectronic performance and are a key enabler for high-performance optical transceivers. InP lasers are the default solution for the communications lasers operating in the 1300–1600 nm wavelength window. As integration technologies continue to mature and information rates scale up, increasingly sophisticated monolithic techniques are deployed for both discrete devices and integrated circuits for longer-reach networking and higher data rates. The possibility to engineer the band gap across the wafer delivers a rich range of functions in an ever-decreasing footprint. Lasers are combined with additional devices such as modulators, multiplexers, detectors and hybrids within the same chip. Wafer scale production offers a proven route to cost-effective, high-volume production. Monolithic integration reduces cost through reduced test time and simplified assembly and packaging. This chapter reviews the techniques, capabilities and future potential for InP-integrated photonics with a particular reference to requirements in the rapidly evolving data interconnect market, driven in particular by data centres, where energy efficiency, bandwidth and volume production are crucial.
Original languageEnglish
Title of host publicationOptical Switching in Next Generation Data Centers
EditorsF. Testa, L. Pavesi
Place of PublicationDordrecht
PublisherSpringer
Chapter14
Pages279-297
Number of pages19
ISBN (Electronic)978-3-319-61052-8
ISBN (Print)978-3-319-61051-1
DOIs
Publication statusPublished - 29 Aug 2017

Fingerprint

high speed
trends
wafers
Optical transceivers
costs
Optical links
Lasers
transmitter receivers
footprints
multiplexing
packaging
Optoelectronic devices
Photonics
Modulators
engineers
lasers
integrated circuits
Integrated circuits
Energy efficiency
optical communication

Cite this

Williams, K., & Docter, B. (2017). Trends in high speed interconnects: InP monolithic integration. In F. Testa, & L. Pavesi (Eds.), Optical Switching in Next Generation Data Centers (pp. 279-297). Dordrecht: Springer. https://doi.org/10.1007/978-3-319-61052-8_14
Williams, K. ; Docter, B. / Trends in high speed interconnects : InP monolithic integration. Optical Switching in Next Generation Data Centers. editor / F. Testa ; L. Pavesi. Dordrecht : Springer, 2017. pp. 279-297
@inbook{483156d1c0ac4ea4ba37aa1555caaea0,
title = "Trends in high speed interconnects: InP monolithic integration",
abstract = "InP PIC technologies offer unsurpassed optoelectronic performance and are a key enabler for high-performance optical transceivers. InP lasers are the default solution for the communications lasers operating in the 1300–1600 nm wavelength window. As integration technologies continue to mature and information rates scale up, increasingly sophisticated monolithic techniques are deployed for both discrete devices and integrated circuits for longer-reach networking and higher data rates. The possibility to engineer the band gap across the wafer delivers a rich range of functions in an ever-decreasing footprint. Lasers are combined with additional devices such as modulators, multiplexers, detectors and hybrids within the same chip. Wafer scale production offers a proven route to cost-effective, high-volume production. Monolithic integration reduces cost through reduced test time and simplified assembly and packaging. This chapter reviews the techniques, capabilities and future potential for InP-integrated photonics with a particular reference to requirements in the rapidly evolving data interconnect market, driven in particular by data centres, where energy efficiency, bandwidth and volume production are crucial.",
author = "K. Williams and B. Docter",
year = "2017",
month = "8",
day = "29",
doi = "10.1007/978-3-319-61052-8_14",
language = "English",
isbn = "978-3-319-61051-1",
pages = "279--297",
editor = "F. Testa and L. Pavesi",
booktitle = "Optical Switching in Next Generation Data Centers",
publisher = "Springer",
address = "Germany",

}

Williams, K & Docter, B 2017, Trends in high speed interconnects: InP monolithic integration. in F Testa & L Pavesi (eds), Optical Switching in Next Generation Data Centers. Springer, Dordrecht, pp. 279-297. https://doi.org/10.1007/978-3-319-61052-8_14

Trends in high speed interconnects : InP monolithic integration. / Williams, K.; Docter, B.

Optical Switching in Next Generation Data Centers. ed. / F. Testa; L. Pavesi. Dordrecht : Springer, 2017. p. 279-297.

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

TY - CHAP

T1 - Trends in high speed interconnects

T2 - InP monolithic integration

AU - Williams, K.

AU - Docter, B.

PY - 2017/8/29

Y1 - 2017/8/29

N2 - InP PIC technologies offer unsurpassed optoelectronic performance and are a key enabler for high-performance optical transceivers. InP lasers are the default solution for the communications lasers operating in the 1300–1600 nm wavelength window. As integration technologies continue to mature and information rates scale up, increasingly sophisticated monolithic techniques are deployed for both discrete devices and integrated circuits for longer-reach networking and higher data rates. The possibility to engineer the band gap across the wafer delivers a rich range of functions in an ever-decreasing footprint. Lasers are combined with additional devices such as modulators, multiplexers, detectors and hybrids within the same chip. Wafer scale production offers a proven route to cost-effective, high-volume production. Monolithic integration reduces cost through reduced test time and simplified assembly and packaging. This chapter reviews the techniques, capabilities and future potential for InP-integrated photonics with a particular reference to requirements in the rapidly evolving data interconnect market, driven in particular by data centres, where energy efficiency, bandwidth and volume production are crucial.

AB - InP PIC technologies offer unsurpassed optoelectronic performance and are a key enabler for high-performance optical transceivers. InP lasers are the default solution for the communications lasers operating in the 1300–1600 nm wavelength window. As integration technologies continue to mature and information rates scale up, increasingly sophisticated monolithic techniques are deployed for both discrete devices and integrated circuits for longer-reach networking and higher data rates. The possibility to engineer the band gap across the wafer delivers a rich range of functions in an ever-decreasing footprint. Lasers are combined with additional devices such as modulators, multiplexers, detectors and hybrids within the same chip. Wafer scale production offers a proven route to cost-effective, high-volume production. Monolithic integration reduces cost through reduced test time and simplified assembly and packaging. This chapter reviews the techniques, capabilities and future potential for InP-integrated photonics with a particular reference to requirements in the rapidly evolving data interconnect market, driven in particular by data centres, where energy efficiency, bandwidth and volume production are crucial.

UR - http://www.scopus.com/inward/record.url?scp=85035315229&partnerID=8YFLogxK

U2 - 10.1007/978-3-319-61052-8_14

DO - 10.1007/978-3-319-61052-8_14

M3 - Chapter

AN - SCOPUS:85035315229

SN - 978-3-319-61051-1

SP - 279

EP - 297

BT - Optical Switching in Next Generation Data Centers

A2 - Testa, F.

A2 - Pavesi, L.

PB - Springer

CY - Dordrecht

ER -

Williams K, Docter B. Trends in high speed interconnects: InP monolithic integration. In Testa F, Pavesi L, editors, Optical Switching in Next Generation Data Centers. Dordrecht: Springer. 2017. p. 279-297 https://doi.org/10.1007/978-3-319-61052-8_14