Abstract
A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate.
| Original language | English |
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| Patent number | US8486800 |
| Publication status | Published - 16 Jul 2013 |
| Externally published | Yes |