Trench capacitor and method for producing the same

Jin Liu (Inventor), A.L. Roest (Inventor), F. Roozeboom (Inventor), V. Shabro (Inventor)

Research output: PatentPatent publication

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Abstract

A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate.
Original languageEnglish
Patent numberUS8486800
Publication statusPublished - 16 Jul 2013
Externally publishedYes

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